MNS2N2222AUBP-Transistor-PIND Overview
The MNS2N2222AUBP-Transistor-PIND is a robust NPN bipolar junction transistor designed for switching and amplification in industrial and commercial electronics. This transistor offers reliable performance with moderate current handling and voltage ratings, making it suitable for general-purpose applications. Its PIND (Particle Impact Noise Detection) packaging ensures enhanced durability against mechanical shocks and vibrations, improving operational reliability in demanding environments. Engineers and sourcing specialists will find this device valuable for cost-effective signal processing and low to medium power amplification tasks. For detailed technical information and procurement, refer to the IC Manufacturer.
MNS2N2222AUBP-Transistor-PIND Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | |
| Collector-Emitter Voltage (Vce) | 40 | V |
| Collector Current (Ic) | 600 | mA |
| Power Dissipation (Ptot) | 625 | mW |
| Gain Bandwidth Product (fT) | 300 | MHz |
| DC Current Gain (hFE) | 100?C300 | |
| Package Type | PIND | |
| Operating Temperature Range | -55 to +150 | ??C |
| Base-Emitter Voltage (Vbe) | 5 | V (max) |
MNS2N2222AUBP-Transistor-PIND Key Features
- High frequency response: Enables efficient switching and amplification in medium-speed circuits, optimizing signal integrity in communication lines.
- Robust PIND packaging: Provides enhanced resistance to mechanical shock and vibration, increasing longevity and reliability in industrial applications.
- Wide operating temperature range: Supports performance in harsh environmental conditions, ensuring stable operation from -55??C to 150??C.
- Moderate power dissipation capability: Allows for use in low to medium power circuits without additional cooling solutions, simplifying design integration.
Typical Applications
- Signal amplification and switching in control circuits where reliable medium current handling is required, such as relay drivers and sensor interfaces.
- Low power audio amplification stages in industrial audio equipment and communication devices.
- General-purpose switching in embedded systems requiring a durable transistor with consistent gain characteristics.
- Pulse generation and waveform shaping circuits in test and measurement instrumentation.
MNS2N2222AUBP-Transistor-PIND Advantages vs Typical Alternatives
This transistor offers a balanced combination of switching speed, current handling, and mechanical robustness due to its PIND packaging. Compared to typical small-signal transistors, it provides superior resistance to physical stress, making it ideal for industrial environments. Its consistent gain and moderate power dissipation reduce the need for complex thermal management, improving system reliability and simplifying design integration.
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MNS2N2222AUBP-Transistor-PIND Brand Info
The MNS2N2222AUBP is manufactured by IC Manufacturer, a reputable supplier specializing in discrete semiconductor components for industrial and commercial applications. This product line is known for its stringent quality standards, reliability, and compliance with global manufacturing certifications. The transistor is widely recognized for its versatility and performance in switching and amplification tasks, supported by IC Manufacturer??s strong technical support and distribution network.
FAQ
What type of transistor is the MNS2N2222AUBP-Transistor-PIND?
It is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. It operates efficiently within its specified voltage and current ratings, making it suitable for a wide range of electronic circuits.
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What is the maximum collector current supported by this transistor?
The device supports a maximum collector current of 600 mA, which allows it to handle moderate load currents in switching and amplification roles without requiring additional heat sinking in most cases.
What advantages does the PIND packaging provide?
PIND packaging enhances the transistor??s resistance to mechanical shocks and vibrations, reducing the risk of damage or performance degradation in harsh
