MMRF5018HSR5 Overview
The MMRF5018HSR5 is a high-performance RF transistor designed for demanding industrial and communication applications. This device offers robust gain and excellent linearity, making it ideal for power amplification tasks in RF circuits. Its compact surface-mount package supports efficient thermal management and integration on multilayer PCBs, facilitating reliable operation at high frequencies. The transistor’s design emphasizes consistent performance, ensuring stable operation under varying environmental conditions. Engineers and sourcing specialists will appreciate its balance of power handling, gain, and ruggedness, making it a practical choice for enhancing system efficiency. For more details and sourcing, visit IC Manufacturer.
MMRF5018HSR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | Up to 2.5 GHz |
| Gain (Typical) | 15 dB at 2 GHz |
| Output Power (P1dB) | 18 W |
| Operating Voltage | 28 V |
| Noise Figure | 1.8 dB (typical) |
| Package Type | SOT89 Surface Mount |
| Thermal Resistance (Junction to Case) | 5 ??C/W |
| Maximum Collector Current | 800 mA |
| Gain Flatness | ??0.5 dB over band |
MMRF5018HSR5 Key Features
- High linear gain: Delivers stable and consistent gain up to 15 dB, ensuring signal integrity in RF amplification stages.
- Robust power handling: Supports up to 18 W output power at 28 V operation, enabling efficient transmission in medium-power applications.
- Low noise figure: Maintains a typical noise figure of 1.8 dB, which enhances overall system sensitivity and reduces signal distortion.
- Compact SOT89 package: Facilitates easy PCB integration with effective thermal dissipation, improving reliability and simplifying assembly.
- Wide frequency operation: Suitable for applications up to 2.5 GHz, covering a broad range of wireless communication bands.
- Stable gain flatness: Gain variation within ??0.5 dB across the frequency range assures consistent amplification performance.
- High collector current capability: Supports up to 800 mA, allowing for flexible biasing and power configurations in diverse designs.
MMRF5018HSR5 Advantages vs Typical Alternatives
This transistor stands out with its combination of high gain and power output in a compact surface-mount package, offering superior integration flexibility compared to traditional through-hole devices. Its low noise figure enhances signal clarity, while the stable gain flatness reduces distortion in RF applications. The robust thermal characteristics ensure reliable performance under continuous operation, providing an edge over alternatives that may suffer from overheating or gain variability. These features make it well-suited for demanding industrial and communication systems requiring precision and durability.
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Typical Applications
- RF power amplification in wireless communication base stations and repeaters, where stable gain and sufficient output power are critical for signal coverage and quality.
- Signal boosting in industrial RF control systems, enhancing transmission reliability in harsh environments.
- Driver stages for RF transmitters, providing low-noise and linear gain necessary for clean signal amplification.
- Test and measurement equipment requiring consistent frequency response and power handling across a wide frequency range.
MMRF5018HSR5 Brand Info
The MMRF5018HSR5 is developed by a leading semiconductor manufacturer specializing in RF components for industrial and communication sectors. This transistor reflects the brand??s commitment to delivering high-quality, reliable, and performance-optimized RF solutions. With stringent quality control and advanced manufacturing processes, the product supports engineers and designers in creating efficient, long-lasting systems. The brand??s extensive portfolio includes diverse RF devices engineered for seamless integration and operational excellence in modern electronics.
FAQ
What frequency range does this transistor support?
This transistor operates effectively up to 2.5 GHz, covering a wide spectrum of wireless communication and industrial RF bands. Its performance remains stable across this frequency range, making it suitable for various applications.
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What is the typical output power capability?
The device supports an output power (P1dB) of 18 watts when operated at 28 volts. This power level is ideal for medium-power RF amplification in communication and industrial equipment.
How does the package type impact device integration?
The surface-mount SOT89 package offers a compact footprint, enabling easy placement on multilayer PCBs. It also provides effective thermal dissipation, which enhances reliability and simplifies manufacturing processes.
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What are the noise characteristics of this transistor?
The typical noise figure is 1.8 dB, which is relatively low for this class of device. This low noise contribution helps preserve signal quality and improves the overall sensitivity of RF systems.
Is this transistor suitable for continuous operation in demanding environments?
Yes, the device features a thermal resistance of 5 ??C/W, allowing efficient heat dissipation during continuous operation. This makes it reliable for sustained use in industrial and communication systems where thermal management is critical.
