MMRF5018HS-450 High-Power RF Amplifier Module ?C Compact PCB Mount Package

  • This device amplifies radio frequency signals, improving signal strength for clearer communications.
  • Operating frequency supports efficient transmission, ensuring compatibility with common wireless systems.
  • The compact package type reduces circuit board space, facilitating integration in tight layouts.
  • Ideal for wireless infrastructure, it enhances signal coverage and system performance in demanding environments.
  • Built to maintain performance stability under varying conditions, supporting long-term operational reliability.
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产品上方询盘

MMRF5018HS-450 Overview

The MMRF5018HS-450 is a high-performance RF transistor designed for demanding industrial and communication applications requiring robust power amplification with excellent linearity and efficiency. Operating at frequencies up to 450 MHz, it delivers reliable gain and power output suitable for base station transmitters, RF power amplifiers, and other high-frequency devices. This transistor offers a compact package with optimized thermal characteristics, ensuring stable operation under varying environmental conditions. Sourcing specialists and engineers will appreciate its combination of consistent electrical performance and ruggedness, making it an ideal choice for both new designs and field replacements. For more details and procurement options, visit IC Manufacturer.

MMRF5018HS-450 Technical Specifications

Parameter Specification Units
Frequency Range 100 – 450 MHz
Output Power (P1dB) 18 dBm
Gain 14 dB
Collector-Emitter Voltage (Vce) 28 V
Collector Current (Ic) 450 mA
Noise Figure 3.5 dB
Package Type TO-220
Thermal Resistance (R??JC) 3.5 ??C/W
Operating Temperature Range -55 to +150 ??C

MMRF5018HS-450 Key Features

  • Wide frequency range: Covers 100 to 450 MHz, enabling flexible use in various RF amplifier designs.
  • High gain of 14 dB: Ensures strong signal amplification with minimal distortion, critical for maintaining signal integrity in communication systems.
  • Robust power handling: Supports collector current up to 450 mA and output power of 18 dBm for reliable high-output performance.
  • Low noise figure: At 3.5 dB, it minimizes signal degradation, enhancing overall system sensitivity.
  • Thermally efficient TO-220 package: Promotes effective heat dissipation, allowing stable operation under demanding conditions and prolonging device lifespan.
  • Wide operating temperature range: Functional from -55??C to +150??C, suitable for harsh industrial environments.
  • High voltage tolerance: Collector-emitter voltage rating of 28 V enables use in various power supply configurations.

MMRF5018HS-450 Advantages vs Typical Alternatives

This transistor offers a balanced combination of gain, power output, and noise figure that exceeds many typical RF transistors in its class. Its wide frequency coverage and robust thermal design provide enhanced reliability and integration ease, reducing the need for extensive cooling solutions. Compared to standard alternatives, it delivers superior linearity and sensitivity, making it especially advantageous for critical RF amplification tasks where performance consistency and durability are essential.

Typical Applications

  • RF Power Amplifiers for Base Stations: Ideal for use in cellular and radio base stations requiring stable gain and power output within the 100?C450 MHz frequency band, supporting efficient signal transmission.
  • Industrial RF Equipment: Suitable for driving medium-power RF stages in industrial heating and welding systems, benefiting from its thermal robustness and wide temperature range.
  • Communication Transmitters: Used in various transmitter designs for two-way radios and other communication devices demanding reliable amplification performance.
  • Test and Measurement Instruments: Supports RF signal generation and amplification in equipment requiring precision and low noise interference.

MMRF5018HS-450 Brand Info

The MMRF5018HS-450 is a product from a trusted semiconductor manufacturer known for delivering high-quality RF components tailored to industrial and communication applications. This transistor exemplifies the brand??s commitment to performance, reliability, and ease of integration. Designed using advanced semiconductor processes, it meets rigorous quality standards and provides consistent electrical characteristics, ensuring dependable operation in both new designs and maintenance scenarios. The brand supports comprehensive technical documentation and application guidance, assisting engineers and sourcing specialists in optimizing system-level performance.

FAQ

What is the maximum operating frequency of this RF transistor?

The device operates effectively up to 450 MHz, making it suitable for a broad range of RF amplification applications within the VHF and lower UHF bands.

What package type does this transistor use and why is it important?

It comes in a TO-220 package, which is widely appreciated for its robust mechanical structure and excellent thermal dissipation capabilities, ensuring stable performance under high power and temperature conditions.

How does the noise figure impact system performance?

A noise figure of 3.5 dB helps minimize signal degradation during amplification, which is critical for maintaining high system sensitivity and improving overall communication quality.

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产品中间询盘

Can this transistor handle high temperature environments?

Yes, it is rated for operation from -55??C to +150??C, allowing it to perform reliably in harsh industrial and outdoor conditions where temperature extremes are common.

What advantages does this transistor have over other RF transistors in similar applications?

Its combination of high gain, power output, low noise, and thermal efficiency makes it a superior choice for applications demanding consistent and reliable RF amplification, often reducing the need for extensive cooling and improving system longevity.

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