MMRF1050HR6 Overview
The MMRF1050HR6 is a high-performance radio frequency (RF) transistor designed for industrial and communication applications requiring robust power handling and efficient signal amplification. Engineered to deliver consistent gain and low noise characteristics, this device supports frequencies typically used in RF front-end modules. Its rugged design ensures reliability under demanding operating conditions, making it an ideal choice for engineers seeking enhanced linearity and thermal stability. The component is available through IC Manufacturer, providing a dependable solution for RF amplification in modern electronic systems.
MMRF1050HR6 Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | Approximately 1000 MHz to 1050 MHz |
| Gain (Typical) | 17 dB |
| Output Power (P1dB) | 20 W (typical) |
| Noise Figure | 2.5 dB (typical) |
| Operating Voltage | 28 V |
| Package Type | Hermetic metal package |
| Operating Temperature Range | -55??C to +85??C |
| Impedance | 50 ?? |
MMRF1050HR6 Key Features
- High Power Output: Capable of delivering up to 20 W output power, enabling strong signal transmission in RF amplifiers.
- Wide Frequency Range: Supports frequencies around 1000 MHz to 1050 MHz, suitable for various communication bands.
- Low Noise Figure: Maintains a noise figure of approximately 2.5 dB, improving signal clarity and overall system sensitivity.
- Robust Thermal Performance: Designed to operate between -55??C and +85??C, ensuring stable performance in harsh environments.
- Hermetic Packaging: The metal package protects the device from environmental factors, enhancing long-term reliability.
MMRF1050HR6 Advantages vs Typical Alternatives
This transistor offers superior gain and output power combined with low noise figure, which is critical for enhancing signal quality in RF amplification stages. Its hermetic metal package provides better protection and thermal stability compared to standard plastic packages, resulting in improved reliability and lifespan. The operating voltage and impedance specifications align well with common RF system requirements, making it an efficient and compatible choice over typical alternatives.
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Typical Applications
- RF Power Amplifiers in Communication Systems: Ideal for amplifying signals in base stations and repeaters where stable gain and power are essential.
- Industrial RF Equipment: Suitable for use in industrial transmitters that require consistent performance under varying temperature conditions.
- Test and Measurement Instruments: Enables accurate signal amplification in RF test setups due to its low noise characteristics.
- Military and Aerospace Communication Modules: The rugged design supports demanding environments typical in defense and aerospace applications.
MMRF1050HR6 Brand Info
The MMRF1050HR6 is part of a series of RF transistors developed by a leading semiconductor manufacturer specializing in high-frequency components. This product line is tailored to deliver reliable, high-power amplification solutions for industrial and communication markets. The brand emphasizes quality, durability, and performance, ensuring that each device meets stringent industry standards. With proven manufacturing processes and extensive testing, this transistor supports engineers and system designers in deploying robust RF modules efficiently.
FAQ
What frequency range does this transistor support?
This transistor is optimized for operation around the 1000 MHz to 1050 MHz frequency range, making it suitable for many RF communication applications within that spectrum.
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What is the maximum output power of the device?
The device can typically deliver an output power of up to 20 watts at its 1 dB compression point, providing sufficient amplification for medium-power RF stages.
How does the noise figure affect system performance?
A noise figure of approximately 2.5 dB means this transistor introduces minimal additional noise, enhancing signal-to-noise ratio and overall receiver sensitivity in communication systems.
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What packaging does the device use and why is it important?
The transistor is housed in a hermetic metal package, which protects it from moisture and contaminants, improving reliability and thermal management compared to standard plastic packages.
Can the transistor operate in harsh environmental conditions?
Yes, it supports an operating temperature range from -55??C to +85??C, allowing it to function reliably in a variety of industrial and outdoor environments.
