MMRF1020-04GNR3 Overview
The MMRF1020-04GNR3 is a high-performance RF transistor designed for demanding industrial and communication applications. This device offers robust gain characteristics and excellent linearity, making it suitable for power amplification in the 4 GHz frequency range. Engineered for reliability and efficiency, it supports advanced system integration while maintaining consistent performance under varying operational conditions. Sourcing specialists and engineers will find this transistor ideal for enhancing signal strength in wireless infrastructure with minimal distortion. For detailed technical data and procurement, visit IC Manufacturer.
MMRF1020-04GNR3 Technical Specifications
| Parameter | Specification |
|---|---|
| Operating Frequency | 3800 ?C 4200 MHz |
| Gain (Typ.) | 13 dB |
| Output Power at 1 dB Compression | 20 W |
| Power Gain at 4 GHz | 12.5 dB |
| Supply Voltage (VCE) | 28 V |
| Quiescent Current | 500 mA |
| Package Type | Flange-mounted metal package |
| Impedance | 50 ?? |
| Thermal Resistance (Junction to Case) | 1.5 ??C/W |
| Operating Temperature Range | -40 ??C to +85 ??C |
MMRF1020-04GNR3 Key Features
- High Power Output: Delivers up to 20 W output power ensuring strong, consistent signal amplification for wireless applications, allowing extended coverage and improved communication quality.
- Wide Frequency Range: Operates efficiently between 3.8 GHz to 4.2 GHz, providing versatility across multiple RF systems and simplifying design requirements for broadband applications.
- Robust Thermal Management: Features a low thermal resistance metal flange package that enhances heat dissipation, improving reliability and enabling operation in harsh industrial environments.
- Low Quiescent Current: Optimized for power efficiency, reducing overall system power consumption and supporting longer device lifetimes in continuous operation scenarios.
MMRF1020-04GNR3 Advantages vs Typical Alternatives
This RF transistor stands out due to its combination of high output power and excellent linearity at 4 GHz, which many alternatives struggle to balance simultaneously. Its robust metal package ensures superior thermal performance and mechanical stability, contributing to enhanced reliability. Additionally, the device??s optimized gain and low quiescent current translate into efficient power usage and less heat generation, making it a preferred choice for engineers seeking durable, high-performance RF amplification solutions.
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Typical Applications
- Wireless communication base stations requiring reliable high-power amplification in the C-band spectrum, supporting broadband voice and data transmission with minimal signal distortion.
- Industrial RF systems used in radar and telemetry, benefiting from the transistor??s wide frequency range and stable gain.
- Satellite communication uplinks where consistent linear amplification is critical to maintaining signal integrity over long distances.
- Test and measurement equipment that demands precise RF amplification with low noise and high stability under varying environmental conditions.
MMRF1020-04GNR3 Brand Info
The MMRF1020-04GNR3 is part of a product line developed by a leading IC manufacturer specializing in high-frequency semiconductor devices. Known for rigorous quality control and cutting-edge semiconductor fabrication techniques, this brand delivers components that meet stringent industrial standards. The product is engineered to provide dependable RF performance, backed by comprehensive documentation and global technical support, making it a trusted choice for engineers and procurement teams in advanced communication and industrial sectors.
FAQ
What is the primary frequency range supported by this RF transistor?
This device operates effectively between 3800 MHz and 4200 MHz (3.8 to 4.2 GHz), covering key segments of the C-band spectrum. This range makes it suitable for various wireless communication and radar applications requiring reliable amplification within these frequencies.
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How does the package type influence the device??s performance?
The transistor uses a flange-mounted metal package, which significantly enhances heat dissipation. Improved thermal management helps maintain stable performance under high power and temperature conditions, reducing the risk of thermal-related failure and extending device longevity.
What power supply voltage is recommended for optimal operation?
The typical supply voltage (VCE) for this transistor is 28 volts. Operating at this voltage ensures the transistor delivers its rated output power and gain characteristics while maintaining efficient power consumption and thermal stability.
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Can this transistor be used in outdoor or harsh environments?
Yes, the device is rated for an operating temperature range from -40 ??C to +85 ??C and features a rugged metal package designed to withstand industrial environments. This makes it suitable for outdoor wireless infrastructure and other demanding applications.
What are the gain characteristics of this transistor at the target frequency?
The transistor typically provides a gain of approximately 13 dB around 4 GHz. This gain level ensures strong signal amplification with minimal distortion, supporting high-quality RF transmission in communication systems.
