MMDT5213W Overview
The MMDT5213W is a high-performance NPN bipolar junction transistor designed for low noise and high gain applications. Ideal for switching and amplification tasks, this device offers dependable electrical characteristics suited for industrial and consumer electronics. Its robust design supports efficient signal processing in compact circuits, ensuring reliable operation across various temperature ranges. Engineers and sourcing specialists will find this transistor to be a versatile component for enhancing circuit sensitivity and overall system performance. For more detailed specifications and purchase options, visit the IC Manufacturer website.
MMDT5213W Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 150 mA |
| Power Dissipation (Ptot) | 200 mW |
| Transition Frequency (fT) | 100 MHz |
| DC Current Gain (hFE) | 100 to 300 |
| Package Type | SOT-23 |
| Operating Temperature Range | -55??C to +150??C |
MMDT5213W Key Features
- High Current Gain: Ensures strong amplification with hFE values between 100 and 300, improving signal strength in low-power circuits.
- Low Noise Performance: Minimizes signal distortion, making it ideal for sensitive analog and RF applications.
- Compact SOT-23 Package: Enables easy integration into space-constrained PCB layouts while maintaining thermal stability.
- Wide Operating Temperature Range: Supports reliable function in harsh industrial environments from -55??C to 150??C.
Typical Applications
- Low-noise signal amplification in audio and radio frequency circuits, enhancing clarity and fidelity in communication equipment.
- Switching applications in portable electronic devices requiring efficient power management and fast response times.
- General-purpose amplification within sensor interfaces and small-signal processing circuits across industrial control systems.
- Integration into driver stages for LED displays and low-power relay controls, supporting compact and reliable designs.
MMDT5213W Advantages vs Typical Alternatives
This transistor offers superior gain and low noise compared to many generic equivalents, enhancing signal integrity in sensitive applications. Its compact SOT-23 package supports miniaturization without sacrificing power dissipation capabilities. The wide temperature range and reliable switching characteristics make it a robust choice for diverse industrial environments, delivering consistent performance and ease of integration.
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MMDT5213W Brand Info
The MMDT5213W is a product commonly offered by established semiconductor manufacturers specializing in discrete components. Known for quality and consistency, these manufacturers provide extensive datasheets and support for design engineers. This transistor is a popular choice in the electronics industry due to its balance of performance, reliability, and cost-effectiveness.
FAQ
What is the maximum collector current rating for the MMDT5213W?
The maximum collector current is specified as 150 mA, making it suitable for low to medium power applications where moderate current flow is required without compromising device reliability.
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Can the MMDT5213W be used in high-frequency circuits?
Yes, with a transition frequency of around 100 MHz, this transistor supports many RF and high-frequency analog applications, ensuring effective signal amplification without significant loss.
What package type does this transistor use, and why is it beneficial?
The device comes in a SOT-23 package, which is compact and surface-mount compatible. This package type allows for space-saving PCB designs and better thermal management in dense electronic assemblies.
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Is the MMDT5213W suitable for operation in extreme temperatures?
Yes, it operates reliably from -55??C up to +150??C, making it well suited for industrial and






