MMDT5114W-AQ Diode Transistor Array – Dual NPN Transistor, SOT-363 Package

MMDT5114W-AQ Overview

The MMDT5114W-AQ is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This transistor features low noise and high gain characteristics, making it suitable for signal amplification in low-level audio and high-frequency circuits. Its compact SOT-23 package ensures easy integration into space-constrained designs. Engineered for reliability and consistent electrical performance, the device is ideal for industrial, consumer electronics, and communication equipment. For detailed specifications and sourcing, visit IC Manufacturer.

MMDT5114W-AQ Technical Specifications

MMDT5114W-AQ Key Features

• High Voltage Handling: The transistor supports up to 50 V collector-emitter voltage, enabling use in moderate voltage circuits with robust performance.
• Wide Gain Range: Offers a DC current gain ranging from 70 to 700, providing flexibility for amplification stages that require varying levels of signal boost.
• Low Noise Characteristics: Optimized for minimal noise generation, it enhances signal clarity in sensitive audio and RF applications.
• Compact SOT-23 Package: Facilitates integration into densely populated PCBs, beneficial for modern miniature industrial and consumer electronics.

Typical Applications

• Low noise audio amplifier stages where precise signal amplification is critical for sound fidelity and clarity.
• Switching circuits in consumer electronics, offering reliable operation under moderate current and voltage conditions.
• High-frequency oscillator circuits, leveraging the device??s 100 MHz transition frequency for effective signal generation.
• General-purpose amplification in industrial control systems requiring stable performance across varying environmental conditions.

MMDT5114W-AQ Advantages vs Typical Alternatives

This transistor delivers a balanced combination of voltage tolerance, gain, and frequency response, making it more versatile than typical low-power BJTs. Its low noise performance and compact SOT-23 package improve integration in sensitive signal paths and space-constrained designs. Compared to alternatives, it provides reliable switching and amplification with enhanced efficiency and consistent electrical parameters, ensuring stable operation in demanding industrial and consumer applications.

MMDT5114W-AQ Brand Info

The MMDT5114W-AQ is manufactured by Diodes Incorporated, a global provider of high-quality semiconductor components. Diodes Incorporated specializes in discrete, logic, and analog semiconductors for a wide range of applications. This transistor is part of their extensive portfolio of BJTs designed to meet demanding industrial and consumer electronics requirements. Known for reliability and robust performance, Diodes?? products like this transistor support engineers and sourcing specialists in developing efficient, cost-effective solutions.

FAQ

What is the maximum collector current rating for the transistor?

The maximum collector current is rated at 100 mA, which allows the device to handle moderate current loads typical in signal amplification and switching applications.

Can this transistor be used in high-frequency applications?

Yes, with a typical transition frequency of 100 MHz, the device is suitable for high-frequency circuits, including oscillators and RF signal amplification.

What package type is used for this transistor, and why is it beneficial?

The transistor comes in a compact SOT-23 package, which saves PCB space and facilitates surface-mount assembly, making it ideal for modern electronics with limited board area.

Is the MMDT5114W