MMDT5111W NPN Transistor – Signal Amplifier – SOT-23 Package by ON Semiconductor

MMDT5111W Overview

The MMDT5111W is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. With a maximum collector current of 600mA and a collector-emitter voltage rating of 80V, it supports medium power levels while maintaining low saturation voltage and fast switching speeds. Its compact SOT-23 package facilitates easy integration in space-constrained industrial and consumer electronics designs. The device offers reliable gain characteristics and robust thermal performance, making it suitable for signal amplification, low noise stages, and switching circuits. For detailed technical insights and sourcing options, visit IC Manufacturer.

MMDT5111W Technical Specifications

MMDT5111W Key Features

• High voltage capability: With an 80V collector-emitter voltage rating, the transistor supports medium voltage applications enhancing design flexibility.
• Moderate collector current of 600mA: Enables efficient switching and amplification in low to medium power circuits, reducing the need for parallel devices.
• Compact SOT-23 package: Facilitates space-saving PCB layouts and simplifies automated assembly in industrial and consumer electronics.
• Fast switching speed with 100MHz transition frequency: Suitable for high-frequency signal amplification and switching, improving overall circuit responsiveness.

Typical Applications

• Signal amplification in audio and communication circuits where medium power and moderate frequency response are required.
• Switching elements in battery-powered devices and portable electronics demanding low power dissipation.
• Driver stages in relay control and LED indicators for industrial automation systems.
• General-purpose amplification and switching in sensor interface circuits and embedded systems.

MMDT5111W Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage rating, current handling, and switching speed, making it advantageous over alternatives with lower voltage or current ratings. Its high gain and low saturation voltage improve circuit efficiency and reduce power loss. The compact SOT-23 package enables easy integration in modern designs with tight space constraints. These factors collectively enhance reliability, reduce BOM complexity, and optimize performance in industrial and consumer applications.

MMDT5111W Brand Info

The MMDT5111W is a popular transistor model widely produced by multiple semiconductor manufacturers, often found in catalogs from global suppliers specializing in discrete semiconductor devices. It is known for its consistent quality and adherence to JEDEC standards. This transistor is commonly offered by brands focusing on general-purpose BJTs suitable for industrial, automotive, and consumer electronics markets. The device??s versatility and robust characteristics have established it as a trusted component in various electronic design and manufacturing workflows.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current rating is 600mA, making it suitable for medium power switching and amplification tasks without requiring additional parallel components.

In which package is this transistor available?

This transistor is provided in a compact SOT-23 surface-mount package, which supports efficient PCB layout and automated assembly for both industrial and consumer electronic products.

Can this transistor be used in high-frequency applications?

Yes, the device features a transition frequency of approximately