MMDT5111W-AQ Overview
The MMDT5111W-AQ is a high-performance NPN bipolar junction transistor designed for switching and amplification applications. With its optimized electrical characteristics and robust packaging, it offers reliable performance in a wide range of industrial and consumer electronics. This transistor features low saturation voltage and high current gain, enhancing efficiency and signal integrity in electronic circuits. The device is ideal for precise, low-noise amplification and rapid switching tasks, supporting engineers in creating compact, energy-efficient designs. For sourcing specialists, the MMDT5111W-AQ provides consistent quality and compatibility with standard SMT assembly processes. For more details, visit the IC Manufacturer.
MMDT5111W-AQ Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 50 V |
| Collector Current (IC) | 600 mA |
| Power Dissipation (PD) | 350 mW |
| Transition Frequency (fT) | 120 MHz |
| DC Current Gain (hFE) | 100 to 300 |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Package Type | SOT-23 |
MMDT5111W-AQ Key Features
- High DC current gain: Enables efficient amplification with low input current, reducing power consumption in signal processing circuits.
- Fast switching speed: Supports high-frequency applications, improving system responsiveness and performance in switching tasks.
- Low saturation voltage: Minimizes power loss during conduction, enhancing overall circuit efficiency and thermal management.
- Compact SOT-23 package: Facilitates space-saving PCB designs and eases surface-mount assembly for automated manufacturing.
Typical Applications
- General-purpose switching: Suitable for controlling loads up to 600 mA in industrial automation and consumer electronics, ensuring reliable operation under varying conditions.
- Signal amplification: Used in low-noise amplifier stages where stable gain and fast response are critical.
- Driver stages: Ideal for driving LEDs, relays, and small motors due to its high current capability and low voltage drop.
- Digital logic circuits: Implements efficient switching elements in logic-level conversion and interface circuits.
MMDT5111W-AQ Advantages vs Typical Alternatives
This transistor offers superior gain and switching speed compared to many generic counterparts, enabling enhanced performance in compact, low-power applications. Its low saturation voltage reduces power dissipation, improving overall system efficiency and thermal reliability. Additionally, the SOT-23 package provides easy integration into automated SMT assembly lines, making it an attractive choice for both prototyping and mass production environments.
🔥 Best-Selling Products
MMDT5111W-AQ Brand Info
The MMDT5111W-AQ is manufactured by ON Semiconductor, a recognized leader in semiconductor components for industrial and consumer applications. ON Semiconductor is known for its commitment to quality, innovation, and sustainability. This product reflects the company??s focus on delivering reliable, high-performance discrete devices optimized for modern electronics design. The MMDT5111W-AQ is part of ON Semiconductor??s extensive portfolio of transistors, trusted by engineers worldwide for their consistency and ease of use.
FAQ
What are the maximum voltage ratings for the MMDT5111W-AQ?
The transistor supports a collector-emitter voltage of up to 50 volts, a collector-base voltage of 60 volts, and an emitter-base voltage of 5 volts. These ratings ensure safe operation within standard low- to medium-voltage circuits.
🌟 Featured Products
-

“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
-

QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
-

0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
-

1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
Can the MMDT5111W-AQ be used for high-frequency applications?
Yes, with a transition frequency of 120 MHz, this device is well-suited for high-frequency switching and amplification tasks commonly found in communication and signal processing equipment.






