MMBTRC106SS Overview
The MMBTRC106SS is a high-performance silicon switching diode designed for efficient signal rectification and protection in compact electronic circuits. Its small SOT-23 package supports surface-mount technology, enabling streamlined PCB integration in space-constrained applications. This device offers fast switching speeds and a low forward voltage drop, ensuring minimal power loss and enhanced circuit reliability. Ideal for use in industrial and consumer electronics, the MMBTRC106SS balances robust electrical characteristics with a compact form factor, making it a versatile component for engineers aiming to optimize device performance. For further technical details and sourcing, visit IC Manufacturer.
MMBTRC106SS Technical Specifications
| Parameter | Value |
|---|---|
| Package Type | SOT-23 |
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 100 V |
| Average Rectified Forward Current (IF(AV)) | 200 mA |
| Forward Voltage (VF) at IF = 200 mA | 1.0 V (typical) |
| Reverse Leakage Current (IR) at VR = 75 V | 0.1 ??A (max) |
| Junction Capacitance (CJ) | 4 pF (typical) |
| Operating Temperature Range | -55??C to +150??C |
| Storage Temperature Range | -55??C to +150??C |
| Reverse Recovery Time (trr) | 6 ns (typical) |
MMBTRC106SS Key Features
- Low forward voltage drop: Reduces power dissipation in high-frequency switching applications, improving overall efficiency.
- Fast switching speed: Enables rapid signal rectification with minimal delay, critical for high-speed circuits.
- Compact SOT-23 package: Facilitates surface-mount assembly in densely populated PCBs, saving board space.
- High reverse voltage rating: Supports reliable operation in circuits exposed to transient voltage spikes.
- Low reverse leakage current: Enhances signal integrity and reduces power loss during off states.
Typical Applications
- High-frequency rectification in DC power supply circuits, where fast switching and low loss are essential for efficient power conversion.
- Signal clipping and protection circuits in communication devices to safeguard sensitive components from voltage spikes.
- Switching regulators and voltage clamping in industrial control systems requiring robust and fast diode response.
- Surface-mount assembly in portable consumer electronics, benefiting from the small footprint and reliable diode performance.
MMBTRC106SS Advantages vs Typical Alternatives
This diode offers a compelling balance of low forward voltage and fast switching speed compared to standard general-purpose diodes. The compact SOT-23 package allows for better integration in space-limited designs, while its low leakage current enhances overall circuit efficiency. These attributes make it advantageous for engineers looking to improve power efficiency and reliability without sacrificing size or switching performance.
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MMBTRC106SS Brand Info
The MMBTRC106SS is manufactured by ON Semiconductor, a leading provider of semiconductor solutions known for high-quality discrete devices and integrated circuits. ON Semiconductor??s focus on innovation and reliability ensures this diode meets stringent industry standards for performance and durability. The product is part of their extensive portfolio optimized for power management and signal conditioning in industrial and consumer electronics applications.
FAQ
What is the maximum operating temperature for the MMBTRC106SS?
The device supports an operating temperature range from -55??C to +150??C, making it suitable for a wide range of industrial and commercial environments where temperature extremes may occur.
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Can this diode be used in surface-mount assembly?
Yes, the diode comes in a compact SOT-23 surface-mount package, designed specifically for automated PCB assembly processes in space-constrained applications.
What is the significance of the low forward voltage drop?
A low forward voltage drop reduces power dissipation during conduction, improving energy efficiency and reducing heat generation in power-sensitive circuits.
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How fast is the switching speed of this diode?
The typical reverse recovery time is approximately 6 nanoseconds, enabling high-speed
