MIC94050YM4-TR Overview
The MIC94050YM4-TR is a high-performance dual N-channel MOSFET designed for power management and load switching in industrial and embedded systems. It integrates two low RDS(on) MOSFETs in a compact SOIC-8 package, enabling efficient power delivery with minimal losses. This device is optimized for applications requiring fast switching and robust thermal performance, ensuring reliable operation under demanding conditions. Its low gate charge and optimized threshold voltages make it ideal for battery-powered and high-frequency switching applications. For more detailed components and solutions, visit IC Manufacturer.
MIC94050YM4-TR Technical Specifications
| Parameter | Specification |
|---|---|
| Type | Dual N-Channel MOSFET |
| Package | SOIC-8 |
| Continuous Drain Current (ID) | 5.7 A (per MOSFET) |
| Drain-Source Voltage (VDS) | 30 V |
| Gate Threshold Voltage (VGS(th)) | 1.0 V (typical) |
| Maximum Power Dissipation (PD) | 1.3 W |
| RDS(on) at VGS=4.5 V | 30 m?? (typical) |
| RDS(on) at VGS=10 V | 20 m?? (typical) |
| Operating Temperature Range | -40??C to +125??C |
MIC94050YM4-TR Key Features
- Dual N-Channel MOSFETs: Enables compact circuit design by integrating two switches in one package, reducing board space and simplifying layout.
- Low RDS(on): Minimizes conduction losses, improving system efficiency and reducing heat dissipation requirements.
- High Current Capability: Supports continuous drain currents up to 5.7 A, suitable for moderate power switching applications.
- Fast Switching Performance: Optimized gate charge characteristics allow for rapid switching, beneficial in high-frequency power conversion.
- Wide Operating Temperature Range: Reliable operation from -40??C to +125??C ensures performance stability in harsh environments.
- Compact SOIC-8 Package: Facilitates easy integration into automated assembly processes and space-constrained designs.
MIC94050YM4-TR Advantages vs Typical Alternatives
This dual MOSFET device offers superior power efficiency with its low RDS(on) values, significantly reducing conduction losses compared to standard discrete MOSFETs. Its integrated dual switches in a single compact package provide better thermal management and lower parasitic inductance. The combination of fast switching speeds and robust current handling makes it favorable over alternatives that may suffer from higher gate charge or limited thermal capabilities, thereby enhancing reliability and performance in demanding industrial applications.
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Typical Applications
- Load switching and power distribution in industrial control systems, where compact size and efficient thermal performance are critical for system reliability over extended operation.
- Battery management systems in portable and embedded devices requiring low-loss switching and precise power control.
- DC-DC converters in telecommunications equipment, benefiting from fast switching and low RDS(on) to improve overall efficiency.
- Automotive electronic control units (ECUs) where robust operation under varying temperature and load conditions is essential.
MIC94050YM4-TR Brand Info
This dual N-channel MOSFET is part of a trusted product line from IC Manufacturer, known for delivering reliable power management solutions tailored to industrial and embedded applications. The device combines advanced semiconductor fabrication technology with rigorous quality control, ensuring consistent performance and durability. Engineered to meet the demanding requirements of modern electronic systems, it supports engineers and sourcing specialists in designing efficient, space-saving, and thermally optimized power architectures.
FAQ
What is the maximum current rating of the MIC94050YM4-TR?
The device can continuously handle drain currents up to 5.7 A per MOSFET under specified operating conditions, making it suitable for medium power load switching and power management tasks.
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How does the low RDS(on) benefit system performance?
Lower RDS(on) reduces conduction losses during operation, which leads to improved efficiency and less heat generation. This helps maintain system stability and can reduce the size and cost of heat dissipation components.
Is the MIC94050YM4-TR suitable for high-frequency switching applications?
Yes, its optimized gate charge and switching characteristics enable fast transitions, making it well-suited for high-frequency DC-DC converters and other switching power supplies.
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What temperature range does the device support?
The device operates reliably within a temperature range of -40??C to +125??C, allowing it to function in harsh environmental conditions typical of industrial and automotive applications.
What packaging options are available for this MOSFET?
This component is available in the SOIC-8 package, which provides a compact footprint and is compatible with automated PCB assembly, facilitating efficient manufacturing processes.