MF3DH23C1DUD/00Z Overview
The MF3DH23C1DUD/00Z is a high-performance semiconductor device designed for industrial and automotive applications requiring robust switching and control capabilities. This component integrates advanced technology to deliver reliable operation under demanding conditions, ensuring efficient power management and system stability. Its compact form factor facilitates easy integration into complex electronic assemblies, while its proven durability supports long-term use in harsh environments. Ideal for engineers and sourcing specialists aiming for dependable semiconductor solutions, this product exemplifies innovation from IC Manufacturer.
MF3DH23C1DUD/00Z Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 23 A |
| On-Resistance (RDS(on)) | 4.5 m?? at VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | 1.5 ?C 3.0 V |
| Total Gate Charge (Qg) | 25 nC |
| Power Dissipation (PD) | 60 W |
| Operating Temperature Range | -55??C to +150??C |
| Package Type | Dual Flat No-lead (DFN) |
MF3DH23C1DUD/00Z Key Features
- Low On-Resistance: The device offers an exceptionally low RDS(on) of 4.5 m??, which minimizes conduction losses and improves overall system efficiency during power switching operations.
- High Current Capability: Supporting continuous drain currents up to 23 A, it accommodates demanding load conditions without compromising performance, crucial for robust industrial power management.
- Compact DFN Package: The dual flat no-lead package reduces PCB footprint and enhances thermal dissipation, simplifying integration into tight spaces while maintaining reliable heat management.
- Wide Operating Temperature Range: Designed to perform reliably from -55??C up to +150??C, it ensures consistent operation in extreme environmental conditions typical of automotive and industrial sectors.
MF3DH23C1DUD/00Z Advantages vs Typical Alternatives
This power MOSFET stands out due to its balanced combination of low on-resistance and high current handling, which improves power efficiency and thermal performance compared to typical alternatives. Its compact packaging supports greater design flexibility while ensuring robust operation across a wide temperature range. These factors collectively enhance system reliability and reduce energy losses in demanding industrial and automotive applications.
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Typical Applications
- Automotive power management systems requiring efficient switching and high current capacity for battery protection and motor control.
- Industrial motor drives where robust thermal performance and low conduction losses are critical for continuous operation.
- Power supply units in communication equipment that demand compact components with precise control capabilities.
- General-purpose DC-DC converters benefiting from the device??s low gate charge and rapid switching characteristics.
MF3DH23C1DUD/00Z Brand Info
Manufactured by a leading global semiconductor company, this product embodies the commitment to quality and innovation associated with the brand. The MF3DH23C1DUD/00Z is tailored to meet stringent industrial and automotive standards, delivering reliable performance and durability. Backed by comprehensive support and extensive testing, it is a trusted choice for engineers seeking advanced power MOSFETs that combine efficiency, reliability, and ease of integration.
FAQ
What is the maximum voltage rating of this power MOSFET?
The device is rated for a maximum drain-source voltage of 30 volts, making it suitable for low to medium voltage power management applications where precise control and efficiency are required.
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How does the on-resistance affect device performance?
Lower on-resistance reduces conduction losses during operation, improving overall efficiency and minimizing heat generation. With an RDS(on) value of 4.5 milliohms, this MOSFET ensures effective power delivery and thermal management in demanding environments.
Can this component operate in harsh temperature environments?
Yes, it supports an operating temperature range from -55??C to +150??C, making it well-suited for automotive and industrial applications that require reliable functionality under extreme temperature conditions.
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What packaging type is used and how does it benefit system design?
The device utilizes a Dual Flat No-lead (DFN) package, which offers a compact footprint and excellent thermal dissipation. This packaging style facilitates easier PCB layout and enhances heat management, contributing to system reliability.
Is this MOSFET appropriate for high current applications?
Absolutely. With a continuous drain current rating of 23 amperes, it can handle significant load currents, making it suitable for various power control and switching applications in industrial and automotive contexts.
