MF3DH2300DA4/00J 3D Hall Sensor Module – Compact DIP Package

MF3DH2300DA4/00J Overview

The MF3DH2300DA4/00J is a high-performance semiconductor device designed for efficient power management in demanding industrial applications. Featuring robust electrical characteristics and enhanced thermal stability, it offers reliable performance under varied operating conditions. This product emphasizes integration and durability, making it suitable for engineers and sourcing specialists seeking dependable components in power electronics. For more detailed technical insights and sourcing options, visit IC Manufacturer.

MF3DH2300DA4/00J Technical Specifications

MF3DH2300DA4/00J Key Features

• Low On-Resistance: The ultra-low 3.5 m?? R_DS(on) reduces conduction losses, improving overall system efficiency and minimizing heat generation.
• High Current Capability: Supports continuous drain current up to 9.5 A, enabling it to handle high power loads reliably in compact systems.
• Fast Switching Performance: Low total gate charge of 12 nC allows for rapid switching, contributing to enhanced switching efficiency and lower switching losses.
• Compact PowerPAK? SO-8 Package: Provides excellent thermal dissipation in a small footprint, facilitating integration into space-constrained industrial designs.

MF3DH2300DA4/00J Advantages vs Typical Alternatives

This device offers superior efficiency through its low on-resistance and fast switching characteristics compared to standard MOSFETs in the same voltage class. Its compact package enables better thermal management and integration in tight board layouts. Enhanced current handling and low threshold voltage optimize performance in industrial power applications, delivering reliable operation with reduced power loss and improved system longevity.

Typical Applications

• Industrial motor control circuits requiring efficient power switching and thermal stability at elevated temperatures.
• High-frequency DC-DC converters where fast switching and low gate charge reduce energy dissipation.
• Power management modules in automation equipment demanding compact, robust semiconductor solutions.
• Battery protection circuits benefiting from low leakage and precise threshold voltages for improved reliability.

MF3DH2300DA4/00J Brand Info

This semiconductor product is part of a portfolio designed by a leading manufacturer specializing in power MOSFETs optimized for industrial and automotive applications. The product family emphasizes reliability, efficiency, and ease of integration, backed by extensive quality assurance and technical support. The device’s PowerPAK? SO-8 package reflects the brand??s commitment to delivering high-performance components suitable for modern power electronics challenges.

FAQ

What is the maximum voltage rating for this device?

The maximum drain-source voltage rating is 30 V, making the device suitable for low to medium voltage power applications commonly found in industrial systems.

How does the low on-resistance benefit my circuit design?

Lower on-resistance reduces conduction losses, which minimizes heat generation and increases overall efficiency. This means your system can operate cooler and with less power loss, improving reliability and performance.

What package type is used and why is it important?

The device uses the PowerPAK? SO-8 package, which offers enhanced thermal performance and a compact footprint. This allows for better heat dissipation in tight PCB layouts, crucial for maintaining performance in industrial environments.

Can this MOSFET handle high switching frequencies?

Yes, with a total gate charge of only 12 nC, the device supports fast switching speeds. This reduces switching losses, making it ideal for high-frequency applications like DC-DC converters and motor drives.

What are the operating temperature limits for reliable use?

The device is rated for junction temperatures from -55 ??C up to +150 ??C, ensuring stable operation across a wide range of industrial ambient conditions.