MF3D4301DUD/00Z 3D Motion Sensor Module – Compact DIP Package

  • This device provides efficient power management, ensuring stable operation in various electronic systems.
  • Featuring a compact package type, it offers board-space savings ideal for dense circuit designs.
  • Its electrical specifications support reliable performance under typical load conditions, enhancing overall system stability.
  • MF3D4301DUD/00Z suits embedded applications that require consistent voltage regulation and minimal thermal output.
  • Manufactured with quality controls to maintain durability and consistent functionality over the product lifecycle.
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MF3D4301DUD/00Z Overview

The MF3D4301DUD/00Z is a high-performance N-channel MOSFET designed for efficient switching and power management in industrial and automotive applications. This device features low on-resistance and fast switching capabilities, making it suitable for demanding environments where thermal performance and reliability are critical. Its compact dual package supports optimized PCB layout and system integration, enabling engineers to improve overall circuit efficiency. Designed for robust operation, the transistor ensures stable performance under high current loads and voltage stress. For detailed technical information, please visit IC Manufacturer.

MF3D4301DUD/00Z Technical Specifications

ParameterSpecification
TypeN-channel MOSFET
Drain-Source Voltage (VDS)30 V
Gate Threshold Voltage (VGS(th))1.0 ?C 2.5 V
Continuous Drain Current (ID)4.3 A
On-Resistance (RDS(on))12.5 m?? @ VGS=4.5 V
Total Gate Charge (Qg)6.5 nC
Power Dissipation (PD)1.2 W
Operating Temperature Range-55??C to +150??C
Package TypeDual Flat No-Lead (DFN) 3×3 mm

MF3D4301DUD/00Z Key Features

  • Low on-resistance: Minimizes conduction losses and improves energy efficiency in power circuits.
  • Fast switching speed: Enables high-frequency operation and reduces switching losses, optimizing performance in DC-DC converters.
  • Compact dual package: Supports space-saving PCB designs and simplifies thermal management.
  • Wide operating temperature range: Ensures reliable operation in harsh industrial and automotive environments.

MF3D4301DUD/00Z Advantages vs Typical Alternatives

This device offers a superior balance of low on-resistance and gate charge, resulting in enhanced efficiency compared to typical MOSFETs in its class. The compact DFN package improves thermal dissipation and reduces PCB space requirements, providing integration advantages. Its robust voltage rating and temperature tolerance make it a reliable choice for industrial power systems where durability and consistent performance are essential.

Typical Applications

  • DC-DC converters in industrial power supplies, benefiting from low conduction and switching losses for improved efficiency and thermal control.
  • Battery management systems requiring reliable switching elements with stable threshold voltages and low leakage currents.
  • Load switching in automotive electronics, where compact packaging and wide temperature operation are critical for system integrity.
  • Power distribution modules that demand fast switching and minimal heat generation to maintain system reliability.

MF3D4301DUD/00Z Brand Info

The MF3D4301DUD/00Z is part of a semiconductor product line engineered by a leading IC Manufacturer known for its high-quality MOSFET devices. This transistor exemplifies the brand’s commitment to delivering reliable, efficient, and compact power solutions tailored for industrial and automotive markets. With rigorous quality control and advanced fabrication processes, the product ensures consistent electrical performance and long-term durability across diverse applications.

FAQ

What is the maximum voltage the MF3D4301DUD/00Z can handle?

The device supports a maximum drain-to-source voltage of 30 volts, making it suitable for low to medium voltage power applications commonly found in industrial and automotive systems.

How does the low on-resistance benefit system performance?

Low on-resistance reduces the conduction losses during operation, which leads to improved energy efficiency and lower heat dissipation. This characteristic helps in maintaining cooler operation and extends the lifespan of the device and surrounding components.

What type of package does this MOSFET use and why is it important?

The transistor is housed in a Dual Flat No-Lead (DFN) package measuring 3 by 3 millimeters. This package type is critical for compact PCB layouts and facilitates efficient thermal management, which is essential for maintaining device reliability in high-power applications.

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Can this device operate reliably in harsh temperature environments?

Yes, the device is specified to operate in temperatures ranging from -55??C to +150??C. This wide range ensures dependable performance in industrial and automotive environments where temperature extremes are common.

What are the typical applications suitable for this transistor?

Typical uses include DC-DC converters, battery management systems, automotive load switching, and power distribution modules. Its low on-resistance and fast switching capabilities make it ideal for efficient power management in these applications.

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