MF3D2301DUD/00Z Overview
The MF3D2301DUD/00Z is a dual N-channel MOSFET designed for high-efficiency power management in industrial and automotive applications. Featuring low on-resistance and fast switching characteristics, it offers optimized performance for load switching and DC/DC conversion. Its robust construction ensures reliable operation under demanding conditions, while a compact package supports efficient PCB layout and thermal management. Engineers and sourcing specialists will appreciate the balance of performance, integration, and durability that this device delivers, making it a versatile choice for power switching needs. Learn more at IC Manufacturer.
MF3D2301DUD/00Z Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 30 | V |
| Continuous Drain Current (ID) @ 25??C | 5.5 | A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 | V |
| Maximum Power Dissipation (PD) | 1.25 | W |
| On-Resistance (RDS(on)) @ VGS=4.5 V | 12 | m?? |
| Total Gate Charge (Qg) | 6.2 | nC |
| Input Capacitance (Ciss) | 370 | pF |
| Operating Junction Temperature (Tj) | -55 to +150 | ??C |
MF3D2301DUD/00Z Key Features
- Dual N-Channel MOSFET Structure: Integrates two matched transistors in a single compact package, simplifying circuit design and saving PCB space.
- Low On-Resistance: With an RDS(on) as low as 12m?? at 4.5V gate drive, it minimizes conduction losses and enhances overall system efficiency.
- Fast Switching Speed: Low gate charge ensures rapid switching, reducing switching losses and improving performance in high-frequency applications.
- Wide Operating Temperature Range: Supports reliable operation from -55??C up to 150??C, suitable for harsh industrial and automotive environments.
MF3D2301DUD/00Z Advantages vs Typical Alternatives
This device offers superior integration by combining two N-channel MOSFETs in a single package, reducing board space and simplifying thermal management compared to discrete solutions. Its low on-resistance and gate charge improve power efficiency and switching performance over standard MOSFETs. Reliability under wide temperature ranges ensures consistent operation in demanding industrial scenarios, making it a robust, energy-efficient alternative for power switching applications.
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Typical Applications
- Load switching in automotive electronic control units, where compact size and reliable operation under temperature extremes are critical for system stability.
- DC/DC converters requiring efficient power management and fast switching to maintain high overall system efficiency.
- Battery management systems in industrial equipment, benefiting from low conduction losses and integrated dual transistor configuration.
- General purpose power switching in industrial automation, enabling compact designs with enhanced thermal and electrical performance.
MF3D2301DUD/00Z Brand Info
This product is part of the MF3D series, recognized for its high-performance MOSFETs optimized for power switching and management applications. Designed and manufactured to meet stringent quality standards, the MF3D2301DUD/00Z integrates advanced semiconductor technology to deliver reliable, efficient, and compact solutions for industrial and automotive electronics. The brand emphasizes innovation and robustness, providing engineers with devices that streamline design complexity while enhancing system performance.
FAQ
What is the maximum voltage rating for the MF3D2301DUD/00Z?
The maximum drain-source voltage (VDS) is rated at 30 volts, making it suitable for low to medium voltage power switching applications in automotive and industrial environments.
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How does the low on-resistance benefit system efficiency?
Lower on-resistance reduces conduction losses during operation, which means less power is wasted as heat. This improves overall efficiency, reduces thermal stress on the device, and can extend system lifetime.
Can this device operate in harsh temperature environments?
Yes, it supports an operating junction temperature range from -55??C to +150??C, ensuring reliable performance in demanding conditions such as automotive under-hood or industrial control systems.
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What package type does this MOSFET come in, and why is it important?
The device is housed in a compact, thermally efficient package that facilitates easy PCB layout and heat dissipation. This helps maintain device reliability and allows for higher power density in modern electronic designs.
Is the dual MOSFET design beneficial for my application?
The integration of two N-channel MOSFETs in a single package reduces space and component count on the PCB, simplifies design complexity, and can improve thermal management. This is especially advantageous in compact or high-reliability power management circuits.
