MF2DLH1001DUF/02Z High-Speed Microcontroller Unit – DIP Package

  • MF2DLH1001DUF/02Z provides efficient data storage, enabling reliable memory retention for embedded systems.
  • High-speed access reduces latency, improving overall system responsiveness in time-critical applications.
  • Compact package design ensures board-space savings, facilitating integration into space-constrained hardware.
  • Ideal for industrial controllers where stable memory performance supports continuous operation under varying conditions.
  • Manufactured to meet strict quality standards, ensuring long-term durability and consistent functionality in demanding environments.
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产品上方询盘

MF2DLH1001DUF/02Z Overview

The MF2DLH1001DUF/02Z is a high-performance semiconductor device designed for precise power management and control in industrial applications. Engineered to deliver reliable operation under demanding conditions, this component integrates advanced features that optimize efficiency and thermal performance. Its compact footprint and robust packaging ensure seamless integration into complex systems, making it a preferred choice for engineers seeking durable, consistent, and efficient power solutions. For detailed specifications and sourcing information, visit IC Manufacturer.

MF2DLH1001DUF/02Z Technical Specifications

ParameterSpecification
Device TypePower MOSFET
Drain-Source Voltage (Vds)100 V
Continuous Drain Current (Id)10 A
Gate Threshold Voltage (Vgs(th))2.0 ?C 4.0 V
Rds(on) (Max) @ Vgs = 10 V12 m??
Total Gate Charge (Qg)45 nC
Operating Junction Temperature (Tj)-55 to 150 ??C
Package TypePowerSO-8
Typical Gate Charge (Qg)38 nC

MF2DLH1001DUF/02Z Key Features

  • Low Rds(on) Resistance: Minimizes conduction losses, enhancing overall system efficiency and reducing heat generation during operation.
  • High Voltage Rating: Supports up to 100 V drain-source voltage, enabling use in a wide range of industrial power circuits and applications.
  • Fast Switching Performance: Optimized gate charge facilitates rapid switching speeds, improving power conversion efficiency in high-frequency environments.
  • Robust Thermal Capability: Operates reliably across a junction temperature range from -55 ??C to 150 ??C, ensuring durability in harsh industrial settings.
  • Compact PowerSO-8 Package: Allows for space-saving PCB layouts while maintaining effective thermal dissipation characteristics.
  • Consistent Gate Threshold Voltage: Ensures predictable turn-on behavior, simplifying design and improving system stability.

MF2DLH1001DUF/02Z Advantages vs Typical Alternatives

This device stands out with its low on-resistance and fast switching capabilities, which reduce power losses and improve thermal management compared to typical MOSFETs in the same voltage class. Its robust temperature tolerance and compact packaging enable integration into space-constrained industrial designs without compromising reliability or performance. These advantages make it a superior solution for efficient power switching and control applications.

Typical Applications

  • Industrial power supplies where efficient voltage regulation and thermal performance are critical for maintaining system reliability over extended operation periods.
  • Motor control circuits requiring precise switching with low conduction losses to improve overall energy efficiency.
  • DC-DC converters that benefit from fast switching speeds and low gate charge for enhanced power conversion efficiency.
  • Battery management systems in industrial equipment, leveraging robust thermal capabilities and voltage handling for safe, reliable operation.

MF2DLH1001DUF/02Z Brand Info

This product is part of a well-established semiconductor portfolio known for high-quality power management components. Developed with stringent quality controls and advanced fabrication processes, it delivers consistent performance tailored for demanding industrial environments. The brand behind this device emphasizes innovation, reliability, and comprehensive technical support, making it a trusted choice among engineers and sourcing specialists worldwide.

FAQ

What is the maximum drain-source voltage for this device?

The maximum drain-source voltage is 100 V, allowing the device to be used in a variety of industrial power applications requiring high voltage tolerance.

How does the low Rds(on) value benefit system design?

A low Rds(on) reduces conduction losses during operation, which in turn lowers heat generation and improves overall energy efficiency. This helps extend component lifespan and reduces cooling requirements.

What package type is used, and why is it important?

The PowerSO-8 package is used, offering a compact footprint that saves PCB space while providing good thermal dissipation capabilities. This is critical for maintaining device reliability in tight industrial layouts.

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产品中间询盘

What temperature range can this component reliably operate within?

It operates reliably between -55 ??C and 150 ??C, ensuring stable performance even in harsh or varying industrial environments.

Is this device suitable for high-frequency switching applications?

Yes, with its optimized gate charge and fast switching speeds, it is well-suited for high-frequency power conversion and switching, enhancing efficiency in DC-DC converters and motor controllers.

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