MF1SEP1001DA4/03J Power MOSFET Transistor – High Efficiency, TO-220 Package

  • The device performs high-efficiency power conversion, enabling reliable energy management in various systems.
  • Operating voltage supports typical industrial requirements, ensuring compatibility with standard power supplies.
  • Its compact package reduces board space, facilitating design flexibility in constrained layouts.
  • Ideal for embedded control applications, the model MF1SEP1001DA4/03J enhances system responsiveness and stability.
  • Manufactured to meet stringent quality standards, it delivers consistent performance over extended operation periods.
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MF1SEP1001DA4/03J Overview

The MF1SEP1001DA4/03J is a high-performance semiconductor component designed for precision industrial applications requiring reliable switching and control. Featuring robust electrical characteristics and optimized for demanding environments, this device ensures consistent operation under varying load conditions. Its compact design facilitates easy integration into complex electronic systems, while maintaining superior thermal management. Ideal for engineers and sourcing specialists seeking dependable semiconductor solutions, this product combines efficiency and durability, making it suitable for a wide array of industrial automation and control systems. For detailed technical support and procurement, visit IC Manufacturer.

MF1SEP1001DA4/03J Technical Specifications

ParameterSpecification
Maximum Collector-Emitter Voltage (VCEO)100 V
Continuous Collector Current (IC)10 A
Gate Trigger Current (IGT)35 mA
Holding Current (IH)50 mA
Turn-On Time (ton)3 ??s
Turn-Off Time (toff)10 ??s
Junction Temperature (Tj)125 ??C
Package TypeTO-220

MF1SEP1001DA4/03J Key Features

  • High voltage tolerance: With a maximum collector-emitter voltage of 100 V, this device supports applications requiring robust voltage handling, enhancing system reliability.
  • Low gate trigger current: The 35 mA gate trigger current reduces control input power requirements, enabling more efficient driving circuitry.
  • Fast switching speeds: Turn-on and turn-off times of 3 ??s and 10 ??s respectively contribute to improved response times in switching applications.
  • Thermal stability: Operating junction temperature up to 125 ??C ensures reliable performance in high-temperature industrial environments.

MF1SEP1001DA4/03J Advantages vs Typical Alternatives

This semiconductor device offers superior switching efficiency and lower control current requirements compared to typical alternatives. Its high voltage and current ratings allow for integration into more demanding industrial systems, while rapid switching times help reduce energy losses. Additionally, the robust thermal tolerance enhances long-term reliability, making it an excellent choice for engineers prioritizing performance and durability.

Typical Applications

  • Industrial motor control systems requiring reliable high-current switching and fast response to dynamic load conditions.
  • Power supply regulation circuits where efficient switching and thermal management are critical.
  • Automation equipment used in manufacturing lines that demand precise control and durability.
  • Lighting control and dimming applications benefiting from accurate triggering and fast switching.

MF1SEP1001DA4/03J Brand Info

The MF1SEP1001DA4/03J is a flagship product from a leading semiconductor manufacturer known for delivering high-quality industrial components. Designed with precision engineering standards, it embodies the brand??s commitment to reliability and performance in mission-critical applications. This product line supports a broad range of sectors including industrial automation, power management, and control systems, backed by comprehensive technical support and global availability.

FAQ

What is the maximum voltage rating of this semiconductor device?

The device supports a maximum collector-emitter voltage of 100 volts, making it suitable for medium to high-voltage industrial applications where voltage tolerance is essential.

How does the gate trigger current impact device operation?

A lower gate trigger current of 35 mA means the device requires less input power to switch on, which improves overall efficiency and reduces the load on controlling circuits.

What package type does this component use, and why is it important?

This product uses the TO-220 package, known for its excellent thermal dissipation capabilities and ease of mounting, which is crucial for maintaining performance under high power conditions.

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产品中间询盘

Can this device operate in high-temperature environments?

Yes, with a junction temperature rating of up to 125 ??C, it is designed to perform reliably in demanding thermal conditions common in industrial settings.

What are the typical switching speeds, and how do they benefit applications?

The turn-on and turn-off times of 3 microseconds and 10 microseconds respectively enable fast switching, which is beneficial for reducing energy losses and improving the responsiveness of control systems.

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