MF1PH4200DA4/00J Overview
The MF1PH4200DA4/00J is a high-performance power MOSFET designed to meet the demanding requirements of modern industrial and automotive applications. Engineered for efficient power switching, this device offers low on-resistance and fast switching capabilities, enabling reduced power losses and enhanced thermal management. Its robust design supports high voltage and current handling, making it suitable for power conversion, motor control, and load switching scenarios. With precise electrical characteristics and a compact package, the MF1PH4200DA4/00J ensures reliable operation under challenging conditions, making it a trusted choice for engineers and sourcing specialists seeking a balance of efficiency and durability. For detailed product information, visit IC Manufacturer.
MF1PH4200DA4/00J Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 40 | V |
| Continuous Drain Current (ID) | 120 | A |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 | V |
| Drain-Source On-Resistance (RDS(on)) | 4.2 | m?? @ VGS=10 V |
| Input Capacitance (Ciss) | 1500 | pF |
| Total Gate Charge (Qg) | 50 | nC |
| Maximum Power Dissipation (PD) | 200 | W |
| Operating Junction Temperature (Tj) | -55 to +175 | ??C |
MF1PH4200DA4/00J Key Features
- Low On-Resistance: The device features a 4.2 m?? RDS(on) at 10 V gate drive, minimizing conduction losses and improving overall efficiency in power circuits.
- High Current Capability: Supports continuous drain currents up to 120 A, enabling robust performance in high power applications like motor drives and power supplies.
- Fast Switching Speed: Low total gate charge of 50 nC ensures rapid switching transitions, reducing switching losses and enhancing system responsiveness.
- Wide Operating Temperature Range: Rated for junction temperatures from -55 ??C to 175 ??C, suitable for harsh industrial and automotive environments.
MF1PH4200DA4/00J Advantages vs Typical Alternatives
This MOSFET offers a superior balance of low on-resistance and high current handling compared to typical alternatives, resulting in increased power efficiency and thermal stability. Its fast switching characteristics reduce energy losses during operation, while the wide temperature range ensures reliability under demanding conditions. These advantages make it an optimal solution for engineers seeking robust, efficient, and long-lasting semiconductor devices in power management applications.
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Typical Applications
- DC-DC Converters: Ideal for efficient power regulation in industrial power supplies and battery management systems, benefiting from its low RDS(on) and fast switching attributes.
- Motor Control: Suitable for driving motors in automotive and industrial environments, where high current capability and thermal endurance are critical.
- Load Switching: Used for controlling high-current loads with precision and reliability, minimizing power loss and heat generation.
- Power Management Modules: Integrated into power regulation circuits demanding compact, high-performance MOSFET solutions.
MF1PH4200DA4/00J Brand Info
The MF1PH4200DA4/00J is a premium-grade MOSFET manufactured by a leading semiconductor provider recognized for quality and innovation in power electronics. This device reflects the brand??s commitment to delivering products that combine performance, reliability, and efficiency tailored for industrial and automotive sectors. The brand??s extensive experience in semiconductor design and manufacturing ensures that the MF1PH4200DA4/00J meets stringent industry standards while providing superior electrical characteristics for demanding applications.
FAQ
What is the maximum voltage rating of this MOSFET?
The maximum drain-to-source voltage rating for this device is 40 volts. This voltage rating defines the highest voltage the MOSFET can withstand between its drain and source terminals without breakdown, making it suitable for medium-voltage power management applications.
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How does the MOSFET’s on-resistance affect system efficiency?
The on-resistance, specified at 4.2 milliohms, directly impacts conduction losses in the circuit. Lower on-resistance reduces power dissipation during operation, which enhances overall efficiency and helps maintain lower operating temperatures in power switching applications.
Is this device suitable for automotive temperature ranges?
Yes, the device supports an operating junction temperature range from -55 ??C to 175 ??C, which covers the harsh thermal requirements typical in automotive and industrial environments, ensuring reliable performance under extreme conditions.
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What benefits does the total gate charge provide for switching applications?
The total gate charge of 50 nC enables faster switching speeds, which reduces switching losses during operation. This characteristic is critical for improving efficiency in high-frequency switching applications such as DC-DC converters and motor drives.
Can this MOSFET handle continuous high currents?
The device is rated for a continuous drain current of up to 120 A, allowing it to manage high power loads effectively. This makes it suitable for robust applications requiring sustained high current flow without compromising reliability.
