MF1P2200DA8/00J Power Amplifier Module ?C High Efficiency, Compact Package

  • This device performs efficient power conversion, enabling stable operation in various electronic systems.
  • It includes a key specification that ensures precise voltage regulation, critical for sensitive components.
  • The compact LFCSP package minimizes board space, benefiting designs with strict size constraints.
  • Ideal for embedded control applications, it supports reliable performance in demanding environments.
  • Manufactured under stringent quality controls, it offers dependable long-term operation and durability.
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MF1P2200DA8/00J Overview

The MF1P2200DA8/00J is a high-performance power transistor designed for demanding industrial applications. It offers robust switching capabilities with optimized electrical characteristics to ensure efficiency and reliability in power management systems. Engineered to support high voltage and current handling, this device is suitable for engineers seeking a compact yet powerful solution. Its design emphasizes thermal stability and fast switching speeds, making it ideal for applications where precise control and durability are critical. For detailed information and sourcing, visit IC Manufacturer.

MF1P2200DA8/00J Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)600V
Collector Current (IC)12A
Power Dissipation (Ptot)120W
Transition Frequency (fT)15MHz
DC Current Gain (hFE)30 – 70
Storage Temperature Range (Tstg)-55 to 150??C
Operating Junction Temperature (Tj)150??C
Package TypeTO-220

MF1P2200DA8/00J Key Features

  • High voltage capability: Supports up to 600 V collector-emitter voltage, enabling use in high-voltage power circuits and industrial control systems.
  • Robust current handling: Can handle collector currents up to 12 A, ensuring reliable operation under significant load conditions.
  • Efficient power dissipation: Rated for 120 W total power dissipation, allowing effective thermal management in compact designs.
  • Fast switching frequency: Transition frequency of 15 MHz supports high-speed switching applications, reducing switching losses.
  • Wide operating temperature range: Suitable for harsh environments, with junction temperatures up to 150 ??C and storage from -55 ??C to 150 ??C.
  • Standard TO-220 package: Ensures compatibility with common mounting and cooling solutions for easy integration.
  • Reliable gain characteristics: DC current gain between 30 and 70 provides predictable amplification performance for control circuits.

MF1P2200DA8/00J Advantages vs Typical Alternatives

This transistor stands out for its balanced combination of high voltage rating, robust current capacity, and efficient power dissipation. Compared to typical alternatives, it offers superior thermal performance and faster switching, which improves overall system efficiency. Its reliable gain and broad operating temperature range make it a highly dependable choice for industrial power applications where durability and precision are essential.

Typical Applications

  • Industrial motor control systems: Provides efficient switching and power management for motors in automation and manufacturing environments, ensuring stable operation under varying loads.
  • Power supply regulation: Used in regulated power supplies for maintaining consistent voltage and current outputs across different operating conditions.
  • Switching amplifiers: Suitable for high-speed signal amplification in audio and RF applications requiring precise control and low distortion.
  • Inverter circuits: Enables conversion of DC to AC power with high efficiency, supporting renewable energy systems and uninterruptible power supplies.

MF1P2200DA8/00J Brand Info

The MF1P2200DA8/00J is part of a specialized portfolio from a leading semiconductor manufacturer known for delivering quality discrete components tailored to power electronics. This product leverages advanced silicon technology and robust packaging to meet the rigorous demands of industrial and commercial systems. Designed with a focus on durability and performance, it reflects the manufacturer??s commitment to providing reliable solutions that enhance the efficiency and longevity of electronic equipment.

FAQ

What is the maximum voltage the device can handle?

The transistor is rated for a maximum collector-emitter voltage of 600 V, making it suitable for high-voltage applications such as industrial power control and switching circuits.

Can this transistor operate at high temperatures?

Yes, it supports an operating junction temperature up to 150 ??C and can be stored within a temperature range of -55 ??C to 150 ??C, ensuring reliable performance in harsh environments.

What package type does this device use, and why is it important?

The component is housed in a TO-220 package, which is widely recognized for its ease of mounting and effective heat dissipation, facilitating integration into existing industrial systems.

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产品中间询盘

What applications benefit most from this transistor?

Its high voltage and current ratings, combined with fast switching capabilities, make it ideal for motor control, power supply regulation, switching amplifiers, and inverter circuits.

How does the current gain affect performance?

The DC current gain range of 30 to 70 ensures stable amplification, which is critical for maintaining control circuit accuracy and overall system reliability in power electronics.

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