LND150N8-G N-Channel MOSFET Transistor, 150V, 8-Pin SOIC Package

  • This device functions as a high-efficiency transistor, enabling precise control of electrical currents in circuits.
  • Its low on-resistance reduces power loss, improving overall energy efficiency during operation.
  • The compact package design allows for board-space savings, facilitating integration into dense electronic assemblies.
  • Ideal for power management in switching regulators, it supports stable voltage regulation under varying loads.
  • Manufactured to meet stringent quality standards, it ensures consistent performance and long-term reliability.
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LND150N8-G Overview

The LND150N8-G is a high-performance N-channel MOSFET designed for efficient power switching and amplification in industrial and automotive electronics. Featuring a low on-resistance and fast switching capabilities, it ensures minimal conduction losses and improved thermal management for enhanced system reliability. The device supports high voltage operations with a robust maximum drain-source voltage, making it suitable for demanding applications requiring durable and precise power control. Its compact package and standardized pin configuration simplify integration into various electronic circuits. For detailed technical support and sourcing, visit IC Manufacturer.

LND150N8-G Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)150V
Continuous Drain Current (ID)8A
Gate Threshold Voltage (VGS(th))2.0 ?C 4.0V
On-Resistance (RDS(on))0.085??
Total Gate Charge (Qg)35nC
Power Dissipation (PD)50W
Operating Junction Temperature (Tj)-55 to 150??C
Package TypeTO-220?C

LND150N8-G Key Features

  • Low On-Resistance: Minimizes conduction losses to improve overall power efficiency and reduce thermal buildup in high current applications.
  • High Voltage Rating: Supports up to 150 V drain-source voltage, enabling reliable operation in demanding industrial and automotive power circuits.
  • Fast Switching Speed: The low gate charge allows for rapid transitions, enhancing switching efficiency and reducing electromagnetic interference.
  • Robust Thermal Performance: Designed to operate within a wide junction temperature range, ensuring stability in harsh environments.

LND150N8-G Advantages vs Typical Alternatives

Compared to typical power MOSFETs, this device offers a superior combination of low on-resistance and high voltage capability, which translates to improved energy efficiency and enhanced durability. Its fast switching characteristics reduce power losses and heat generation, making it well-suited for compact, high-density designs. These factors provide engineers with a reliable solution for applications demanding precision and ruggedness without sacrificing performance.

Typical Applications

  • Power Management in Industrial Equipment: Ideal for switching and amplification tasks within motor drivers, power supplies, and control units requiring reliable high-voltage handling and efficient thermal management.
  • Automotive Electronics: Suitable for use in automotive power control modules where robust voltage tolerance and fast switching improve system responsiveness and longevity.
  • DC-DC Converters: Enables efficient voltage regulation through rapid switching and low conduction loss, improving overall converter efficiency.
  • Battery Management Systems: Supports safe and efficient power switching in battery protection and charging circuits due to its reliable operating voltage and current specifications.

LND150N8-G Brand Info

This MOSFET is part of a trusted product line known for balancing high performance with reliability in challenging environments. Engineered for demanding industrial and automotive applications, the device embodies quality manufacturing standards and rigorous testing procedures. Backed by comprehensive datasheets and technical resources, it ensures ease of integration and dependable operation throughout its lifecycle.

FAQ

What is the maximum drain-source voltage supported by this MOSFET?

The maximum drain-source voltage is rated at 150 V, allowing it to handle high-voltage applications safely under standard operating conditions.

How does the on-resistance impact the device??s efficiency?

A low on-resistance of 0.085 ?? reduces conduction losses during operation, which helps improve overall power efficiency and minimizes heat generation, enhancing reliability.

What package type is used, and how does it affect thermal management?

The device comes in a TO-220 package, which offers effective heat dissipation through its metal tab, supporting better thermal performance in high-power applications.

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Can this MOSFET be used in automotive applications?

Yes, the device is suitable for automotive electronics due to its high voltage rating, robust thermal tolerance, and fast switching capabilities required for control and power modules.

What is the typical operating temperature range for reliable performance?

The MOSFET operates reliably within a junction temperature range of -55??C to 150??C, making it suitable for environments with wide temperature variations.

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