LND150N3-G-P003 High-Performance N-Channel MOSFET Transistor – TO-220 Package

  • Efficient switching transistor enabling precise control in power management circuits for improved system performance.
  • Features a low on-resistance that reduces energy loss and increases overall efficiency in electronic designs.
  • Compact package minimizes board space, allowing denser component placement in tight electronic assemblies.
  • Suitable for use in DC-DC converters where stable current handling enhances device reliability and operation.
  • Manufactured with stringent quality controls to ensure consistent performance and long-term durability under typical conditions.
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产品上方询盘

LND150N3-G-P003 Overview

The LND150N3-G-P003 is a high-performance N-channel MOSFET designed for power switching and amplification applications. Its low on-resistance and high current handling capability make it suitable for efficient power management in industrial electronics. Engineered to deliver reliable operation under demanding conditions, this device supports fast switching speeds and robust thermal performance. Ideal for engineers and sourcing specialists seeking a durable and efficient transistor solution, it ensures optimal performance in a variety of power conversion and control circuits. For detailed specifications and sourcing, visit IC Manufacturer.

LND150N3-G-P003 Technical Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) 150 A
On-Resistance (RDS(on)) 3.0 m??
Gate Threshold Voltage (VGS(th)) 1.0 – 2.0 V
Total Gate Charge (Qg) 60 nC
Power Dissipation (PD) 300 W
Operating Junction Temperature (TJ) -55 to +150 ??C
Package Type TO-220 ?C

LND150N3-G-P003 Key Features

  • Low On-Resistance: Minimizes conduction losses, improving efficiency and reducing heat generation during high-current operation.
  • High Current Capability: Supports continuous drain currents up to 150 A, enabling robust power handling in demanding industrial applications.
  • Fast Switching Performance: Optimized gate charge characteristics allow for rapid switching, enhancing performance in PWM controllers and motor drive circuits.
  • Wide Temperature Range: Reliable operation from -55??C up to 150??C ensures durability in harsh environments and extended device life.

LND150N3-G-P003 Advantages vs Typical Alternatives

This transistor offers a compelling combination of low on-resistance and high current capacity, providing superior efficiency compared to many standard MOSFETs. Its fast switching speeds reduce energy loss in switching applications, while the robust TO-220 package enhances thermal dissipation. These factors contribute to improved system reliability and reduced cooling requirements, making it an advantageous choice over typical alternatives in industrial power control scenarios.

Typical Applications

  • Industrial power supplies and converters requiring efficient high-current switching and thermal management, ensuring reliable performance in continuous operation.
  • Motor control circuits where fast switching and low conduction losses optimize speed and torque control.
  • DC-DC converters for voltage regulation in automation and control systems.
  • Power switching in battery management systems and renewable energy inverters demanding robust, high-current handling.

LND150N3-G-P003 Brand Info

This device is a product from a leading semiconductor manufacturer known for delivering high-quality MOSFETs tailored for industrial and power electronics markets. The LND150N3-G-P003 combines advanced silicon technology and rigorous testing to meet stringent performance and reliability standards. Its design focuses on optimizing power efficiency, thermal stability, and ease of integration, supporting engineers in building durable, high-performance electronic systems.

FAQ

What is the maximum voltage rating for this MOSFET?

The maximum drain-to-source voltage rating is 30 V, which defines the highest voltage the device can safely block when in the off state without damage.

How does the on-resistance affect the device??s performance?

Low on-resistance reduces conduction losses during operation, leading to improved efficiency and lower heat generation. This characteristic is critical for high-current applications to maintain system reliability.

Is this MOSFET suitable for high-temperature environments?

Yes, it is rated for operation up to 150??C junction temperature, making it suitable for harsh or high-temperature industrial environments while maintaining stable performance.

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产品中间询盘

What package type does this transistor use?

The device is housed in a TO-220 package, which facilitates effective heat dissipation and straightforward mounting on heatsinks, essential for managing thermal loads during high-power switching.

Can this MOSFET be used in motor control applications?

Absolutely. Its high current capacity, low on-resistance, and fast switching capabilities make it well-suited for motor drivers and control circuits requiring precise and efficient power handling.

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