LND150K1-G Overview
The LND150K1-G is a high-performance semiconductor device designed for precision analog and power applications. It delivers reliable operation with robust electrical characteristics, making it suitable for demanding industrial environments. This product supports a wide range of voltage and current conditions while maintaining consistent performance. Engineers and sourcing specialists will appreciate its compact form factor and strong electrical parameters, which facilitate efficient integration into complex systems. For detailed technical and sourcing information, visit IC Manufacturer.
LND150K1-G Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 250 | V |
| Gate-Source Voltage (VGS) | ??30 | V |
| Continuous Drain Current (ID) | 0.2 | A |
| Power Dissipation (PD) | 1.3 | W |
| RDS(on) (Max) | 50 | ?? |
| Input Capacitance (Ciss) | 4.5 | pF |
| Operating Temperature Range | -55 to 150 | ??C |
| Package Type | TO-92 | ?C |
LND150K1-G Key Features
- High voltage tolerance: Supports up to 250V drain-source voltage, enabling use in high-voltage circuits for reliable switching and amplification.
- Low input capacitance: With an input capacitance of 4.5pF, it offers fast switching speeds, improving efficiency in high-frequency applications.
- Compact TO-92 package: Facilitates easy integration into PCB designs with limited space, supporting versatile industrial and consumer electronics layouts.
- Wide operating temperature range: Ensures stable performance from -55??C to 150??C, making it suitable for harsh environments and automotive applications.
LND150K1-G Advantages vs Typical Alternatives
This device provides superior voltage handling and low on-resistance compared to typical JFETs in similar packages, resulting in enhanced sensitivity and precision in analog circuits. Its low input capacitance reduces switching losses, improving power efficiency. Additionally, the robust temperature rating and compact packaging offer reliability and ease of use in demanding industrial and consumer electronics environments.
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Typical Applications
- Analog signal amplification where low noise and high input impedance are critical, such as audio preamplifiers and sensor interfaces, benefiting from the device??s low input capacitance and stable operation.
- Switching circuits requiring high-voltage tolerance and reliable gate control, including power management and protection circuits.
- Industrial control systems operating under wide temperature ranges, leveraging the device??s ability to maintain performance in harsh conditions.
- Consumer electronics requiring compact, reliable transistor solutions for signal processing and switching tasks within limited PCB space.
LND150K1-G Brand Info
The LND150K1-G is manufactured by a leading semiconductor provider recognized for producing high-quality JFET transistors. This product embodies the brand??s commitment to delivering reliable, high-performance components that meet stringent industrial standards. The device??s design focuses on precision, efficiency, and durability, making it a trusted choice for engineers developing advanced analog and power electronics systems.
FAQ
What is the maximum voltage that the LND150K1-G can handle?
The transistor can withstand a maximum drain-source voltage of 250V, allowing it to operate safely in high-voltage circuits without risk of breakdown or damage.
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What package type is used for this device?
This product comes in a TO-92 package, which is compact and widely used for through-hole mounting, enabling easy integration into various PCB designs.
What temperature range can this transistor operate within?
The device supports an operating temperature range from -55??C to 150??C, making it suitable for both industrial and automotive applications where temperature extremes are common.
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How does the low input capacitance benefit circuit design?
The low input capacitance of 4.5pF reduces switching delays and losses, improving the transistor??s performance in high-frequency and fast-switching applications.
Is this transistor suitable for power amplification?
While it handles moderate continuous drain currents up to 0.2A, the device is more suited for signal amplification and switching rather than high-power amplification tasks.






