JN6FR07SM1 Overview
The JN6FR07SM1 is a high-performance semiconductor device designed for industrial electronic applications requiring robust switching and signal control. Engineered to deliver reliable operation under stringent conditions, this component offers precise electrical characteristics that optimize power efficiency and system stability. Its compact form factor and advanced integration make it a suitable choice for complex circuitry in automation, power management, and control systems. Sourcing specialists and design engineers benefit from its consistent performance metrics and compatibility with a wide range of industrial environments. For detailed specifications and procurement, visit IC Manufacturer.
JN6FR07SM1 Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Power MOSFET |
| Drain-Source Voltage (VDS) | 700 V |
| Continuous Drain Current (ID) | 6 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| RDS(on) (Max) at VGS=10 V | 0.075 ?? |
| Power Dissipation (PD) | 40 W |
| Operating Junction Temperature (TJ) | -55 to 150 ??C |
| Packaging | TO-252 (DPAK) |
JN6FR07SM1 Key Features
- High voltage rating: Supports up to 700 V, enabling use in demanding power switching applications requiring high voltage tolerance.
- Low on-resistance: Features a maximum RDS(on) of 0.075 ?? at 10 V gate drive, which reduces conduction losses and improves energy efficiency.
- Robust current handling: Capable of continuous drain current of 6 A, ensuring reliable operation in medium power circuits.
- Wide operating temperature range: Rated from -55 ??C to 150 ??C, suitable for harsh industrial environments and thermal cycling.
- Compact TO-252 package: Facilitates easy integration into surface-mount PCB layouts with effective heat dissipation.
- Gate threshold voltage stability: Ensures consistent switching performance across temperature variations.
- High power dissipation: Supports up to 40 W, allowing for sustained operation under load.
JN6FR07SM1 Advantages vs Typical Alternatives
This device offers superior voltage handling and lower conduction losses compared to typical alternatives in the same power class. Its reliable gate threshold voltage and broad temperature tolerance enhance switching accuracy and durability, leading to improved system efficiency and longer operational life. The compact TO-252 package provides better heat dissipation and ease of assembly, making it a practical and cost-effective solution for demanding industrial power control applications.
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Typical Applications
- Industrial motor drives and inverters requiring efficient high-voltage switching and robust current handling in compact form factors.
- Power supply circuits where low on-resistance reduces heat generation and improves overall efficiency.
- Automated control systems that demand reliable operation over wide temperature ranges and harsh environmental conditions.
- DC-DC converters and switching regulators in industrial automation equipment requiring precise power management.
JN6FR07SM1 Brand Info
The JN6FR07SM1 is produced by a leading semiconductor manufacturer known for its high-quality power MOSFETs tailored for industrial electronics. This product line emphasizes performance, durability, and ease of integration, supporting engineers with reliable components that meet stringent industrial standards. The brand offers comprehensive technical documentation and support to ensure smooth implementation in various power management and switching applications.
FAQ
What is the maximum voltage this MOSFET can handle?
The maximum drain-source voltage rating is 700 V, making this device suitable for high-voltage switching applications in industrial and power electronics environments.
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