JN4FT04SJ4-R Overview
The JN4FT04SJ4-R is a high-performance semiconductor device designed for advanced electronic switching applications. Engineered with precise voltage and current handling capabilities, this component delivers reliable operation in demanding industrial environments. Its robust construction and optimized design ensure consistent signal integrity and efficient power management. Ideal for engineers and sourcing specialists requiring dependable performance in compact form factors, this device supports seamless integration within complex electronic systems. For detailed specifications and purchasing options, visit IC Manufacturer.
JN4FT04SJ4-R Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 4.5 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 V |
| RDS(on) (max) | 0.045 ?? @ VGS = 4.5 V |
| Power Dissipation (PD) | 1.25 W |
| Operating Temperature Range | -55??C to +150??C |
| Package Type | SOIC-8 |
JN4FT04SJ4-R Key Features
- Low On-Resistance: Minimizes conduction losses, enhancing overall circuit efficiency and thermal performance.
- High Current Capability: Supports up to 4.5 A continuous drain current, accommodating high-power switching needs.
- Fast Switching Speeds: Enables improved signal timing and reduced switching losses in high-frequency applications.
- Wide Operating Temperature Range: Reliable operation from -55??C to +150??C ensures durability in harsh industrial environments.
JN4FT04SJ4-R Advantages vs Typical Alternatives
This device offers superior efficiency through its low on-resistance and fast switching capabilities compared to typical MOSFET alternatives. Its robust current handling and extended temperature range provide enhanced reliability and stability in demanding industrial applications, delivering a competitive advantage in power management and signal integrity.
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Typical Applications
- Power management circuits in industrial automation systems requiring efficient switching and thermal stability.
- Load switching and motor control applications benefiting from high current capacity and fast response.
- DC-DC converters where low conduction losses improve overall energy efficiency.
- Signal processing circuits that demand reliable operation across wide temperature ranges.
JN4FT04SJ4-R Brand Info
The JN4FT04SJ4-R is a product from a leading semiconductor manufacturer known for delivering high-quality MOSFET solutions. This device reflects the brand??s commitment to precision engineering and reliability, targeting industrial and commercial electronics markets that require consistent performance and durable components. Designed with advanced fabrication technology, it meets stringent quality standards for demanding electronic switching applications.
FAQ
What is the maximum drain-source voltage rating for this device?
The maximum drain-source voltage (VDS) rating is 40 V, making it suitable for a wide range of mid-voltage switching applications where reliable voltage tolerance is critical.
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How does the on-resistance affect device performance?
Lower on-resistance reduces power loss during conduction, improving energy efficiency and minimizing heat generation, which enhances the overall reliability and operational lifespan of the device in switching applications.
What package type does this MOSFET come in?
This MOSFET is housed in an SOIC-8 package, which is widely used for its compact size and ease of integration into surface-mount circuit designs.
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What temperature conditions can this device operate under reliably?
The device supports an operating temperature range from -55??C to +150??C, allowing it to function reliably in harsh environments typical of industrial and automotive electronics.