JN16FE06SS1 Overview
The JN16FE06SS1 is a high-performance semiconductor device designed for efficient power switching and control in industrial applications. Featuring robust electrical characteristics and enhanced thermal management, this component ensures reliable operation in demanding environments. Its optimized switching capabilities contribute to improved system efficiency, making it suitable for power conversion and motor drive circuits. Manufactured with advanced process technology, the device delivers consistent performance while maintaining low on-resistance and fast switching speeds. Engineers and sourcing specialists will find it a valuable solution for integrating into industrial control systems and power management designs. For detailed specifications and procurement, visit IC Manufacturer.
JN16FE06SS1 Technical Specifications
| Parameter | Specification |
|---|---|
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 16 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| Drain-Source On-Resistance (RDS(on)) | 0.06 ?? (max) |
| Gate Charge (Qg) | 28 nC |
| Power Dissipation (PD) | 75 W |
| Operating Junction Temperature (TJ) | -55 to 150 ??C |
| Package Type | TO-220 Full Pack |
JN16FE06SS1 Key Features
- High Voltage Handling: Supports up to 600 V drain-source voltage, enabling use in high-voltage industrial power systems.
- Low On-Resistance: Maximum RDS(on) of 0.06 ?? minimizes conduction losses, improving overall energy efficiency.
- Robust Current Capability: Continuous drain current rating of 16 A allows for reliable operation in demanding load conditions.
- Fast Switching Performance: Gate charge of 28 nC ensures quick switching, reducing switching losses and enhancing system responsiveness.
- Wide Temperature Range: Operating junction temperature from -55 ??C to 150 ??C supports harsh industrial environments without performance degradation.
- Standardized Package: The TO-220 Full Pack package facilitates easy mounting with excellent thermal dissipation.
JN16FE06SS1 Advantages vs Typical Alternatives
This device offers a balanced combination of high voltage tolerance and low on-resistance, delivering superior power efficiency compared to standard MOSFETs. Its robust current rating and thermal stability provide enhanced reliability under continuous heavy loads. Additionally, the low gate charge contributes to faster switching speeds, which reduces power loss in switching applications. These factors make it a technically advantageous choice for industrial power management over generic alternatives.
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Typical Applications
- Power converters and inverters in industrial automation systems requiring efficient switching and thermal stability for continuous operation.
- Motor drive circuits where precise and reliable control of high current loads is critical.
- Switching power supplies benefiting from low conduction and switching losses to improve overall system efficiency.
- Industrial lighting and power distribution systems demanding robust components capable of high voltage and temperature endurance.
JN16FE06SS1 Brand Info
The JN16FE06SS1 is part of IC Manufacturer??s industrial-grade semiconductor lineup, known for its commitment to quality and performance in power electronics. This device is engineered to meet the rigorous demands of industrial applications, combining durability with high electrical performance. IC Manufacturer??s stringent production standards and comprehensive testing ensure consistent reliability, supporting engineers and designers in delivering robust solutions across various power management and control systems.
FAQ
What is the maximum voltage rating for this device?
The maximum drain-source voltage rating is 600 V, making the device suitable for high-voltage industrial power applications and ensuring safe operation under demanding electrical conditions.
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How does the low on-resistance benefit system performance?
A



