JN14FH04SJ1 High-Performance MOSFET Transistor – TO-220 Package

  • This device functions as a high-performance transistor, enabling efficient signal amplification and switching tasks.
  • Featuring a voltage rating suitable for various circuits, it supports reliable operation under standard electrical conditions.
  • The package design offers a compact footprint, facilitating board-space savings in dense electronic assemblies.
  • Ideal for use in power management modules, it helps maintain stable performance under varying load conditions.
  • Manufactured with quality control measures to ensure consistent performance and durability in demanding environments.
SKU: JN14FH04SJ1 Category: Brand:
产品上方询盘

JN14FH04SJ1 Overview

The JN14FH04SJ1 is a high-performance semiconductor device designed for industrial applications requiring reliable power switching and signal control. Engineered for efficiency and durability, it offers robust electrical characteristics suitable for demanding environments. Its compact package and stable operation make it an ideal choice for engineers and sourcing specialists focused on optimizing system performance and minimizing downtime. Available through IC Manufacturer, this device supports a wide range of industrial electronic solutions with proven reliability.

JN14FH04SJ1 Technical Specifications

Parameter Specification
Maximum Drain-Source Voltage (Vds) 40 V
Continuous Drain Current (Id) 14 A
Gate Threshold Voltage (Vgs(th)) 1.0 – 2.5 V
Drain-Source On-Resistance (Rds(on)) 4.0 m?? @ Vgs=10 V
Gate Charge (Qg) 35 nC
Operating Junction Temperature (Tj) -55??C to +150??C
Package Type TO-220
Input Capacitance (Ciss) 1200 pF

JN14FH04SJ1 Key Features

  • Low On-Resistance: Ensures minimal conduction losses, improving power efficiency and thermal performance in high-current applications.
  • High Continuous Drain Current: Supports up to 14 A, enabling effective handling of demanding load conditions with enhanced reliability.
  • Wide Operating Temperature Range: Maintains stable operation from -55??C to +150??C, suitable for harsh industrial environments.
  • Fast Switching Capability: Low gate charge allows rapid switching, reducing switching losses and boosting overall system efficiency.

JN14FH04SJ1 Advantages vs Typical Alternatives

This device offers superior sensitivity and low on-resistance compared to typical alternatives, resulting in better power efficiency and lower heat generation. Its robust current handling and broad temperature tolerance provide reliable operation in industrial settings where precision and durability are critical. Integration into existing systems benefits from its compact TO-220 package, making it a practical and effective semiconductor solution.

Typical Applications

  • Power management circuits in industrial automation systems, delivering efficient energy control and ensuring system stability under varying load conditions.
  • Switching regulators and DC-DC converters requiring fast and efficient power switching to maintain optimal voltage levels.
  • Motor control circuits where high current capacity and thermal endurance are essential for sustained operation.
  • General-purpose switching applications in industrial electronics, benefiting from its reliable performance and ease of integration.

JN14FH04SJ1 Brand Info

The JN14FH04SJ1 is part of a semiconductor product line designed by a leading manufacturer specializing in reliable power devices. This model exemplifies the brand??s commitment to high-quality, efficient, and durable components suited for industrial electronic systems. Its development focuses on meeting stringent performance criteria to support customers in achieving robust and energy-efficient designs.

FAQ

What is the maximum voltage rating for the JN14FH04SJ1?

The maximum drain-to-source voltage rating of this device is 40 volts, making it suitable for applications that operate within this voltage range and require robust switching performance.

How does the gate threshold voltage affect device operation?

The gate threshold voltage ranges from 1.0 to 2.5 volts, indicating the minimum gate voltage needed to start conduction. This parameter is critical for controlling switching behavior and ensuring efficient device activation.

What are the thermal operating limits of this device?

The device can reliably operate within a junction temperature range of -55??C to +150??C, making it well-suited for environments with wide temperature fluctuations typical in industrial settings.

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产品中间询盘

Why is low on-resistance important in power semiconductors?

Low on-resistance reduces conduction losses when the device is active, which minimizes heat generation and improves overall energy efficiency. This leads to longer device life and better system reliability.

What packaging does the JN14FH04SJ1 use, and why is it beneficial?

This device is housed in a TO-220 package, known for its ease of mounting and excellent thermal dissipation characteristics

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