JN14FH04SJ1-F Overview
The JN14FH04SJ1-F is a high-performance semiconductor device designed for efficient power management and switching applications. This component offers robust electrical characteristics, ensuring reliable operation in demanding industrial environments. Engineered with precision to support low power loss and enhanced thermal stability, it is suitable for a broad range of electronic circuits requiring high switching speed and durability. Sourcing specialists and engineers will appreciate its compact footprint and compatibility with standard PCB layouts. For detailed technical support and availability, visit IC Manufacturer.
JN14FH04SJ1-F Technical Specifications
| Parameter | Specification |
|---|---|
| Maximum Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 14 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 V |
| RDS(on) (Max.) @ VGS = 10 V | 4.0 m?? |
| Total Gate Charge (Qg) | 22 nC |
| Power Dissipation (PD) | 2.5 W |
| Operating Temperature Range | -55??C to +150??C |
| Package Type | SO-8 |
JN14FH04SJ1-F Key Features
- Low On-Resistance: The device??s 4.0 m?? maximum RDS(on) reduces conduction losses, improving overall efficiency in power switching circuits.
- High Continuous Drain Current: Supports up to 14 A, enabling use in high load conditions without compromising performance or reliability.
- Wide Operating Temperature Range: Functions reliably between -55??C and +150??C, suitable for harsh industrial and automotive environments.
- Compact SO-8 Package: Facilitates easy integration into densely populated PCBs, saving board space and simplifying assembly.
JN14FH04SJ1-F Advantages vs Typical Alternatives
This component offers a compelling combination of low on-resistance and high current capacity, which leads to reduced power loss compared to conventional MOSFETs. Its wide temperature tolerance enhances long-term reliability in industrial applications. The compact SO-8 package supports streamlined PCB design, providing an advantage over bulkier alternatives that limit layout flexibility.
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Typical Applications
- Power management in DC-DC converters, where efficient switching and thermal stability are critical for maintaining system performance and longevity.
- Load switching circuits, providing dependable control of high-current devices in automation systems.
- Battery protection circuits, ensuring safe operation under overcurrent and temperature stress conditions.
- Motor control applications, benefiting from the device??s fast switching speed and high current handling capability.
JN14FH04SJ1-F Brand Info
The JN14FH04SJ1-F is manufactured by a reputable semiconductor supplier specializing in power MOSFETs optimized for industrial and automotive markets. This product line is known for its stringent quality standards, robust design, and reliable performance in challenging electrical environments. The brand’s commitment to continuous innovation ensures that this device meets the evolving demands of modern electronic systems.
FAQ
What is the maximum voltage rating of the JN14FH04SJ1-F?
The device can withstand a maximum drain-source voltage of 40 volts, making it suitable for medium-voltage power switching applications within this range.
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How does the low RDS(on) benefit circuit efficiency?
A low on-resistance minimizes conduction losses when the MOSFET is in the “on” state. This reduces heat generation and improves overall energy efficiency, which is particularly important in power-sensitive designs.
Can this MOSFET operate in high-temperature environments?
Yes, it supports an operating temperature range from -55??C up to +150??C,