JANTXVU2N3019-Transistor Overview
The JANTXVU2N3019 transistor is a high-reliability, silicon NPN bipolar junction transistor designed for demanding military and industrial applications. It offers excellent switching and amplification performance with robust electrical characteristics and enhanced temperature stability. Manufactured to stringent standards, this transistor provides consistent gain and low noise figures, making it suitable for precision analog circuits and power amplification stages. Its hermetically sealed metal can package ensures long-term durability in harsh environments. Engineers and sourcing specialists can rely on this component for dependable operation in avionics, radar systems, and other mission-critical electronics. For more detailed product insights, visit IC Manufacturer.
JANTXVU2N3019-Transistor Key Features
- High Voltage Handling: Capable of withstanding collector-emitter voltages up to 80V, enabling use in high-voltage switching and amplification circuits.
- Strong Collector Current Capacity: Supports collector current up to 1.5A, allowing effective power handling in demanding load conditions.
- Low Noise Operation: Designed for low noise figure, ensuring signal integrity in sensitive analog and RF applications.
- Hermetically Sealed Metal Can Package: Provides superior environmental protection, enhancing reliability in extreme temperature and humidity conditions.
JANTXVU2N3019-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 7 V |
| Collector Current (IC) | 1.5 A |
| Power Dissipation (Ptot) | 30 W |
| Transition Frequency (fT) | 80 MHz |
| DC Current Gain (hFE) | 40 to 160 (varies by test conditions) |
| Package Type | Hermetically Sealed Metal Can (TO-18) |
| Operating Temperature Range | -55 ??C to +200 ??C |
JANTXVU2N3019-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current ratings compared to many standard NPN transistors, combined with hermetic packaging that ensures reliability in extreme environments. Its low noise characteristics and stable gain make it preferable for precision analog and high-frequency circuits. These factors collectively enhance system robustness and lifespan, setting it apart from typical plastic-encapsulated alternatives.
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Typical Applications
- Military and aerospace avionics systems requiring robust, high-voltage switching and amplification components that tolerate extreme temperature ranges.
- Radar and communication equipment where low noise and stable gain are critical for signal fidelity.
- Industrial control systems demanding reliable power transistors with high current capacity and durability.
- Precision analog circuits in instrumentation needing consistent performance under harsh environmental conditions.
JANTXVU2N3019-Transistor Brand Info
The JANTXVU2N3019 transistor is produced under strict military specifications ensuring quality and reliability. This product line is recognized for consistent electrical performance, hermetic sealing, and high ruggedness, making it a trusted choice for defense and aerospace sectors. The brand focuses on delivering components that meet or exceed MIL-STD requirements, providing engineers with confidence in mission-critical applications.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current for this device is rated at 1.5 amperes, allowing it to handle relatively high load currents in switching and amplification circuits without performance degradation.
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How does the hermetic metal can package benefit the transistor’s operation?
The hermetic metal can package provides excellent protection against moisture, dust, and other environmental contaminants, significantly enhancing reliability and lifespan in harsh or high-reliability applications such as aerospace and military systems.
What voltage levels can the transistor safely operate under?
This transistor supports a collector-emitter voltage up to 80 volts and a collector-base voltage of 100 volts, making it suitable for moderately high-voltage applications requiring robust electrical isolation.
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Is this transistor suitable for high-frequency applications?
Yes, with a transition frequency of approximately 80 MHz, this transistor can be effectively used in moderate-frequency analog circuits and RF stages, balancing gain and bandwidth for reliable performance.
What temperature range can this transistor operate within?
The transistor is qualified to operate across a wide temperature range from -55 ??C to +200 ??C, supporting use in environments with extreme thermal conditions without compromising electrical characteristics.
