JANTXVU2N2920-Transistor by JANTXVU | High-Performance Switching Transistor, TO-220 Package

  • This transistor amplifies electrical signals efficiently, enabling improved circuit performance and control.
  • Its voltage rating supports stable operation under varying electrical loads, ensuring consistent functionality.
  • The compact package design reduces board space, allowing for more streamlined electronic assemblies.
  • Ideal for switching applications, it enhances response times and energy efficiency in control systems.
  • Manufactured to meet rigorous quality standards, it offers dependable operation over extended periods.
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JANTXVU2N2920-Transistor Overview

The JANTXVU2N2920-Transistor is a high-performance bipolar junction transistor (BJT) designed for reliable switching and amplification in demanding industrial and military applications. Engineered to meet stringent JAN (Joint Army-Navy) specifications, this transistor ensures superior thermal stability and enhanced durability under harsh operating conditions. Its robust construction supports high voltage and current handling, making it suitable for power control circuits and signal processing. Sourcing specialists and engineers will appreciate its proven performance compliance and extended lifecycle, delivering consistent operation where precision and reliability are critical. For detailed technical guidance and supply chain support, visit IC Manufacturer.

JANTXVU2N2920-Transistor Key Features

  • High voltage rating: Supports collector-emitter voltages up to 100V, enabling robust operation in power amplification circuits.
  • Elevated current capacity: Handles collector currents up to 8A, ensuring effective switching in high-power applications without compromising performance.
  • Military-grade reliability: Complies with JAN standards, guaranteeing enhanced thermal and environmental resilience for mission-critical systems.
  • Low saturation voltage: Minimizes power loss during switching, contributing to improved system efficiency and thermal management.

JANTXVU2N2920-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 8 A
Power Dissipation (PD) 75 W
DC Current Gain (hFE) 40?C160 ?C
Transition Frequency (fT) ?C MHz
Junction Temperature (Tj) 200 ??C
Package Type TO-3 Metal Can ?C

JANTXVU2N2920-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced robustness and thermal stability compared to standard commercial BJTs, benefiting applications requiring consistent performance under extreme conditions. Its compliance with military-grade JAN standards ensures higher reliability and longer service life. The combination of high current capacity and low saturation voltage makes it more efficient than typical transistors, reducing system power losses and improving overall circuit durability.

Typical Applications

  • Power amplification in industrial control systems where high voltage and current handling are essential for driving heavy loads.
  • Switching applications in military-grade power supplies, ensuring dependable operation under harsh environmental stresses.
  • Signal amplification circuits requiring stable gain and thermal endurance for precision electronics.
  • General-purpose high-reliability transistor use in aerospace and defense electronics.

JANTXVU2N2920-Transistor Brand Info

The JANTXVU2N2920-Transistor is manufactured under strict quality controls aligned with JAN military specifications, reflecting its origin in defense-focused semiconductor production. This product line is known for durability and consistent electrical characteristics, providing dependable solutions for engineers designing high-reliability electronics. The brand is recognized for integrating rugged materials and robust packaging, such as the TO-3 metal can, to deliver enhanced thermal dissipation and mechanical protection.

FAQ

What voltage levels can the JANTXVU2N2920-Transistor safely handle?

This transistor is rated for collector-emitter voltages up to 100V and collector-base voltages up to 120V, enabling it to operate safely in circuits with relatively high voltage demands typical in power amplification and switching applications.

How does this transistor perform under high current conditions?

The device supports a maximum collector current of 8A, making it suitable for high-current switching and amplification. Its robust construction ensures stable performance without thermal runaway, even under continuous load.

What packaging does the transistor use, and why is it important?

The transistor is housed in a TO-3 metal can package, which offers excellent thermal conductivity and mechanical strength. This packaging helps maintain junction temperature stability and protects the device in rugged environments.

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Is this transistor suitable for military or aerospace applications?

Yes, the device meets JAN standards, which are military-grade specifications ensuring reliability, durability, and performance under harsh conditions, making it ideal for aerospace, defense, and other mission-critical electronics.

What are the benefits of low saturation voltage in this transistor?

Low saturation voltage reduces power loss during switching, improving overall circuit efficiency and reducing heat generation. This enhances the reliability and lifetime of both the transistor and the surrounding components.

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