JANTXVU2N2919-Transistor by JANTXVU2 | High-Power Switching Transistor, TO-220 Package

  • This transistor amplifies electrical signals, enabling efficient control of current flow in circuits.
  • It features a high voltage rating, ensuring stable performance in demanding environments.
  • Its compact package design allows for board-space savings and easier integration into tight layouts.
  • Ideal for use in switching applications, it improves device responsiveness and energy efficiency.
  • Manufactured with quality controls to provide consistent operation and long-term reliability.
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JANTXVU2N2919-Transistor Overview

The JANTXVU2N2919-Transistor is a high-reliability bipolar junction transistor (BJT) designed for demanding industrial and military applications. Featuring robust construction and stringent quality control, this transistor delivers consistent performance in amplification and switching tasks. Its enhanced electrical characteristics enable stable operation across a wide temperature range, making it ideal for harsh environments. With proven durability and precise control over gain parameters, it supports efficient circuit designs requiring dependable signal modulation. Sourced from a trusted supplier, this component assures engineers and sourcing specialists of long-term reliability and compatibility within complex electronic systems. For more information, visit the IC Manufacturer.

JANTXVU2N2919-Transistor Key Features

  • High current gain (hFE) ensures effective signal amplification, improving overall circuit performance.
  • Durable construction supports operation under elevated temperatures, enhancing reliability in industrial environments.
  • Low saturation voltage contributes to efficient switching, reducing power loss and heat generation.
  • Wide collector-emitter voltage rating enables handling of high voltage loads safely and effectively.

JANTXVU2N2919-Transistor Technical Specifications

ParameterValue
Transistor TypeNPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)80 V
Collector-Base Voltage (VCBO)100 V
Emitter-Base Voltage (VEBO)5 V
Continuous Collector Current (IC)800 mA
Gain Bandwidth Product (fT)100 MHz
Power Dissipation (PD)625 mW
DC Current Gain (hFE)40 – 320 (at IC = 150 mA)
Operating Temperature Range-55??C to +200??C

JANTXVU2N2919-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and thermal stability compared to typical commercial-grade components. Its extended operating temperature range and higher voltage handling capability provide enhanced durability for industrial and military applications. Low saturation voltage reduces power consumption, improving efficiency in switching circuits. These characteristics make it a preferred choice for engineers seeking robust semiconductor devices with dependable gain and switching performance under challenging conditions.

Typical Applications

  • Signal amplification in industrial control systems, where stable gain and temperature resilience are critical for consistent operation.
  • Switching elements in power management circuits requiring low saturation voltage to minimize energy losses.
  • High-frequency oscillator circuits benefiting from a gain bandwidth product suitable for moderate-frequency applications.
  • Military-grade electronic devices demanding reliable performance across extreme environmental conditions.

JANTXVU2N2919-Transistor Brand Info

The JANTXVU2N2919-Transistor is manufactured under strict quality standards, adhering to military and industrial-grade specifications. This product is part of a long-established line of bipolar transistors trusted for their ruggedness and precision. Tailored for demanding applications, the brand emphasizes durability, traceability, and consistent electrical characteristics, ensuring that each unit meets stringent performance criteria. It is widely recognized among engineers for its reliability and suitability in critical electronic assemblies.

FAQ

What type of transistor is the JANTXVU2N2919?

This device is an NPN bipolar junction transistor designed for amplification and switching applications. It features robust characteristics suitable for industrial and military environments, supporting moderate current and voltage levels.

What is the maximum collector current for this transistor?

The maximum continuous collector current is specified at 800 mA, allowing it to handle moderate power loads effectively without compromising reliability.

Can this transistor operate in high-temperature environments?

Yes, it supports an operating temperature range from -55??C up to +200??C, making it suitable for use in environments with extreme thermal conditions.

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产品中间询盘

What is the significance of the gain bandwidth product for this transistor?

The gain bandwidth product of 100 MHz indicates the transistor can amplify signals efficiently up to moderate frequencies, making it useful in many signal processing and oscillator applications.

How does the low saturation voltage benefit circuit design?

Low saturation voltage reduces power loss and heat dissipation during switching operations, enhancing energy efficiency and reliability in power-sensitive industrial and military circuits.

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