JANTXVU2N2906A-Transistor by JAN ?C PNP Transistor, TO-18 Metal Can Package

  • This transistor amplifies or switches electronic signals, enabling efficient control in circuits.
  • Featuring a robust voltage rating, it ensures stable operation under varying electrical loads.
  • The compact package type offers board-space savings, making it suitable for dense circuit designs.
  • Ideal for signal amplification in audio devices, it improves sound quality and reduces distortion.
  • Manufactured to meet standard quality controls, it provides consistent performance over time.
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JANTXVU2N2906A-Transistor Overview

The JANTXVU2N2906A is a rugged, military-grade PNP bipolar junction transistor (BJT) designed for high-reliability applications requiring robust switching and amplification performance. Featuring a high collector-emitter voltage rating and substantial collector current capacity, it is optimized for use in demanding industrial and defense-grade electronics. This transistor delivers stable operation under harsh conditions, including temperature extremes and mechanical stress, making it ideal for aerospace, communication, and control systems. For trusted sourcing and detailed datasheets, visit IC Manufacturer.

JANTXVU2N2906A-Transistor Key Features

  • High voltage tolerance: With a collector-emitter voltage rating up to 60 V, it ensures reliable operation in high-voltage circuits, reducing risk of breakdown.
  • Robust collector current: Supports continuous collector current up to 600 mA, enabling efficient power handling in switching and amplification tasks.
  • Military-grade reliability: Compliance with JAN (Joint Army-Navy) standards guarantees enhanced durability and consistent performance under extreme environmental conditions.
  • Low noise operation: Suitable for sensitive analog circuitry where signal integrity is critical, providing clean amplification with minimal distortion.

JANTXVU2N2906A-Transistor Technical Specifications

Parameter Specification
Transistor Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA (continuous)
Power Dissipation (Ptot) 800 mW
Transition Frequency (fT) 100 MHz (typical)
DC Current Gain (hFE) 40 to 300 (depending on operating conditions)
Operating Temperature Range -55??C to +200??C

JANTXVU2N2906A-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling compared to standard commercial BJTs, combined with rigorous military-grade testing for enhanced reliability. Its broad temperature range and low noise characteristics make it well suited for precision analog circuits and harsh environments, providing engineers with a dependable component that maintains performance where typical transistors may fail.

Typical Applications

  • Switching and amplification in defense and aerospace electronics, where high reliability and stable performance under temperature extremes are essential.
  • Industrial control systems requiring robust transistors capable of handling moderate power loads with consistent gain.
  • Analog signal amplification in communication equipment where low noise and distortion are critical.
  • Test and measurement instruments that demand precision transistor behavior and long-term reliability.

JANTXVU2N2906A-Transistor Brand Info

The JANTXVU2N2906A is part of a series of military-grade transistors manufactured to meet stringent Joint Army-Navy (JAN) standards. This product is identified by rigorous screening and quality control processes to ensure consistent electrical performance and mechanical durability. Designed for demanding applications, it is widely recognized in the industry for its reliability and suitability in high-stress environments where failure is not an option.

FAQ

What type of transistor is the JANTXVU2N2906A?

The device is a PNP bipolar junction transistor (BJT), designed primarily for switching and amplification applications within industrial and military-grade electronic circuits.

What is the maximum collector current supported by this transistor?

This transistor supports a continuous collector current of up to 600 milliamps, enabling it to handle moderate power levels in various switching and amplification scenarios.

Can the transistor operate under extreme temperature conditions?

Yes, it is rated to operate reliably across a wide temperature range from -55??C to +200??C, making it suitable for harsh environments including aerospace and defense applications.

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What is the maximum voltage the transistor can withstand between collector and emitter?

The maximum collector-emitter voltage (VCEO) is 60 volts, allowing the transistor to function safely in high-voltage circuits without risk of breakdown.

How does this transistor ensure reliability in critical applications?

The transistor meets stringent JAN military standards, which include thorough screening and testing for electrical and mechanical durability, ensuring consistent performance in critical and demanding applications.

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