JANTXVU2N2222AUB-Transistor NPN Switching Amplifier in TO-18 Metal Can Package

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • Its current gain supports stable operation, ensuring consistent performance under typical load conditions.
  • The compact TO-92 package offers easy integration with minimal board-space requirements.
  • Ideal for switching applications in low-power devices, enhancing responsiveness and energy efficiency.
  • Manufactured with quality controls to provide dependable operation and long-term durability.
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JANTXVU2N2222AUB-Transistor Overview

The JANTXVU2N2222AUB-Transistor is a high-performance bipolar junction transistor (BJT) designed for switching and amplification in a wide range of industrial and commercial electronics. Featuring robust electrical characteristics, this device offers reliable operation under stringent conditions, making it suitable for applications requiring consistent performance and durability. Its complementary design supports efficient current control, enabling engineers to optimize circuit functionality. Available through IC Manufacturer, this transistor is engineered for precision and longevity in demanding environments.

JANTXVU2N2222AUB-Transistor Key Features

  • High current gain: Enables effective amplification, improving signal strength and circuit efficiency.
  • Fast switching speed: Ideal for switching applications where rapid response time is critical.
  • Wide voltage range: Supports operation in diverse power conditions, enhancing design flexibility.
  • Robust thermal stability: Maintains reliable performance across temperature variations, ensuring long-term durability.

JANTXVU2N2222AUB-Transistor Technical Specifications

ParameterSpecification
Transistor TypeNPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)40 V
Collector Current (IC)600 mA
Gain Bandwidth Product (fT)300 MHz
DC Current Gain (hFE)100?C300
Power Dissipation (PD)625 mW
Junction Temperature (TJ)?55??C to +200??C
Package TypeTO-18 Metal Can

JANTXVU2N2222AUB-Transistor Advantages vs Typical Alternatives

This transistor provides enhanced reliability and thermal stability compared to typical alternatives, especially in harsh environments. Its high current gain and switching speed contribute to improved circuit sensitivity and efficiency. The metal can package ensures superior heat dissipation and mechanical robustness, making it a preferred choice for precision industrial applications.

Typical Applications

  • Switching circuits in industrial control systems, where rapid and reliable switching is essential for automation and signal processing.
  • General-purpose amplification in audio and signal conditioning circuits requiring consistent gain and low noise.
  • Driver stages for relays and LEDs, providing efficient current control and protection.
  • Low to medium power switching applications in embedded systems and electronic instrumentation.

JANTXVU2N2222AUB-Transistor Brand Info

The JANTXVU2N2222AUB-Transistor is part of a well-established product line known for its rugged design and high reliability. Manufactured to meet stringent military and industrial standards, this transistor offers consistent performance in demanding environments. Its robust packaging and tested electrical parameters make it a trusted component among engineers and sourcing specialists requiring dependable semiconductor solutions.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current for the transistor is rated at 600 mA, allowing it to handle moderate power loads suitable for switching and amplification tasks in various electronic circuits.

Can this transistor operate at high temperatures?

Yes, this device supports junction temperatures ranging from ?55??C up to +200??C, making it suitable for applications requiring thermal stability and reliable operation under elevated temperature conditions.

What package type does this transistor use?

This transistor is housed in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical protection, enhancing overall device durability and performance.

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Is this transistor suitable for high-frequency applications?

With a gain bandwidth product of approximately 300 MHz, this transistor is capable of operating effectively in moderately high-frequency circuits, including RF amplification and fast switching applications.

What makes this transistor preferable over standard plastic-encapsulated BJTs?

The metal can packaging and tested military-grade specifications of this transistor provide superior thermal management and mechanical robustness compared to standard plastic-encapsulated BJTs, improving reliability in critical applications.

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