JANTXVU2N2222AL-Transistor NPN Switching Amplifier in TO-18 Metal Can Package

  • This transistor amplifies and switches electrical signals, enabling efficient circuit control and signal processing.
  • Its maximum collector current supports robust operation, ensuring dependable performance under typical loads.
  • The compact package type offers board-space savings, facilitating integration into tightly packed electronic assemblies.
  • Ideal for driving small motors or LED arrays, it enhances circuit responsiveness and energy efficiency in embedded systems.
  • Manufactured under standard quality protocols, it provides consistent reliability for long-term electronic applications.
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JANTXVU2N2222AL-Transistor Overview

The JANTXVU2N2222AL is a high-reliability bipolar junction transistor (BJT) designed for switching and amplification in industrial and military-grade applications. Engineered to deliver consistent performance under harsh environmental conditions, this transistor features a robust silicon NPN construction with enhanced current gain and voltage tolerance. Its parameters support medium power handling with efficient switching speeds, making it suitable for diverse electronic circuits requiring dependable amplification and signal control. Sourced from a trusted supplier, the device adheres to stringent quality standards, ensuring long-term operational stability. For detailed sourcing and technical support, visit IC Manufacturer.

JANTXVU2N2222AL-Transistor Key Features

  • High Collector-Emitter Voltage (VCEO): Supports up to 40 V, enabling reliable operation in circuits with moderate voltage requirements.
  • Continuous Collector Current (IC): Rated for 600 mA, providing robust current handling suitable for various switching and amplification tasks.
  • Power Dissipation Capability: Maximum power dissipation of 625 mW ensures stable performance under thermal stress, reducing risk of overheating in compact designs.
  • Gain Bandwidth Product (fT): Offers a transition frequency around 300 MHz, facilitating fast switching speeds that improve signal processing efficiency.

JANTXVU2N2222AL-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Continuous Collector Current (IC) 600 mA
Power Dissipation (Ptot) 625 mW
Current Gain (hFE) 100 ?C 300 (typical)
Transition Frequency (fT) 300 MHz
Operating Temperature Range -55 to +175 ??C

JANTXVU2N2222AL-Transistor Advantages vs Typical Alternatives

This transistor excels over standard general-purpose BJTs by offering enhanced temperature tolerance and military-grade qualification, ensuring higher reliability in demanding environments. Its superior current gain and power dissipation ratings allow for efficient switching and amplification, reducing thermal stress and improving circuit longevity. The wide operating temperature range and voltage handling make it a preferred choice for engineers seeking durable and precise transistor solutions that perform consistently under industrial and aerospace conditions.

Typical Applications

  • Switching circuits in industrial control systems where reliable signal modulation and amplification are required under variable temperatures and conditions.
  • Signal amplification in audio, sensor, and communication equipment benefiting from fast transition frequency and stable gain.
  • Driver stages for relays and small motors in automated machinery leveraging high current capacity and voltage tolerance.
  • General purpose transistor replacement in military and aerospace electronic assemblies demanding ruggedness and thermal endurance.

JANTXVU2N2222AL-Transistor Brand Info

The JANTXVU2N2222AL transistor is part of a specialized product line designed for high-reliability applications. Manufactured to meet military and industrial standards, this device undergoes rigorous testing to ensure performance consistency in harsh conditions. Its brand reputation is built on delivering semiconductors with proven durability, tight parameter control, and compliance with strict quality certifications. This transistor is widely recognized and trusted by engineers and sourcing specialists requiring dependable components for critical electronic systems.

FAQ

What are the primary electrical ratings for the JANTXVU2N2222AL transistor?

The key electrical parameters include a collector-emitter voltage rating of 40 V, collector current up to 600 mA, and power dissipation up to 625 mW. These specifications define the operational limits ensuring reliable performance under typical industrial and military conditions.

How does the operating temperature range affect this transistor??s application?

With an operating range from -55??C to +175??C, this transistor supports environments with extreme temperature variations, making it suitable for aerospace, defense, and industrial applications that require consistent transistor behavior without thermal degradation.

What is the significance of the gain bandwidth product in this device?

The typical transition frequency of 300 MHz indicates the transistor??s ability to switch and amplify signals rapidly, which is crucial for high-frequency circuits such as RF amplifiers, communication modules, and fast switching control systems.

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Can the JANTXVU2N2222AL transistor be used in power amplification circuits?

While primarily designed for switching and medium-power amplification, its maximum power dissipation of 625 mW and current rating make it suitable for low to moderate power amplification tasks, provided the thermal management requirements are met.

What packaging and mounting options are available for this transistor?

This transistor is typically available in a hermetically sealed metal can package, enhancing its durability and suitability for harsh environments, which facilitates reliable mounting on printed circuit boards requiring robust mechanical and thermal characteristics.

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