JANTXVU2N2221AUA-Transistor Overview
The JANTXVU2N2221AUA transistor is a robust NPN bipolar junction transistor designed for high-reliability applications requiring consistent performance under demanding conditions. With a maximum collector current of 800mA and a collector-emitter voltage rating of 40V, this device is well-suited for switching and amplification roles in industrial electronics. Its JAN (Joint Army-Navy) specification ensures enhanced durability and quality, making it a preferred choice for aerospace and military-grade designs. Engineers and sourcing specialists benefit from its proven reliability, thermal stability, and well-documented electrical characteristics, enabling confident integration into critical systems. For detailed manufacturer information, visit IC Manufacturer.
JANTXVU2N2221AUA-Transistor Key Features
- High collector current capability: Supports continuous collector current up to 800mA, enabling efficient switching and amplification in moderate power circuits.
- Voltage tolerance: Collector-emitter voltage rating of 40V ensures safe operation in circuits with higher voltage demands.
- Enhanced reliability: Built to JAN standards, this transistor delivers superior ruggedness, thermal stability, and long-term performance under harsh environmental conditions.
- Low noise operation: Suitable for signal amplification with minimal distortion, ensuring clean signal processing in sensitive electronic applications.
JANTXVU2N2221AUA-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Bipolar Junction | ?C |
| Collector-Emitter Voltage (Vceo) | 40 | V |
| Collector-Base Voltage (Vcbo) | 75 | V |
| Emitter-Base Voltage (Vebo) | 6 | V |
| Collector Current (Ic) | 800 | mA |
| DC Current Gain (hFE) | 40 to 300 | ?C |
| Transition Frequency (fT) | 250 | MHz |
| Power Dissipation (Pd) | 625 | mW |
| Operating Temperature Range | -55 to +200 | ??C |
JANTXVU2N2221AUA-Transistor Advantages vs Typical Alternatives
This transistor offers a compelling balance of high current capacity and voltage tolerance within a rugged JAN-certified package, providing enhanced reliability and thermal endurance. Compared to standard commercial transistors, it ensures superior performance in mission-critical environments, reducing failure rates and maintenance needs. Its broad gain range and low noise characteristics support precise and efficient circuit integration, making it advantageous for engineers requiring dependable, high-quality switching and amplification components.
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Typical Applications
- Industrial control systems: Utilized for reliable switching and signal amplification in automated machinery and process control circuits, where durability and consistent operation are essential.
- Aerospace electronics: Suitable for avionics and defense hardware requiring rugged components that withstand temperature extremes and mechanical stress.
- Power management circuits: Employed in voltage regulation and power switching applications to maintain efficient energy use and circuit stability.
- Signal amplification: Used in audio and RF amplification stages where low noise and stable gain are critical for maintaining signal integrity.
JANTXVU2N2221AUA-Transistor Brand Info
The JANTXVU2N2221AUA transistor is manufactured under strict military standards to meet the demanding reliability and performance requirements of defense and aerospace sectors. This JAN series device emphasizes ruggedness, quality assurance, and extended operating temperature ranges. It reflects the manufacturer??s commitment to providing industrial and military-grade components that excel in harsh environments, ensuring dependable operation in critical applications where failure is not an option.
FAQ
What distinguishes the JANTXVU2N2221AUA from commercial-grade 2N2221 transistors?
The JANTXVU2N2221AUA is built to JAN military specifications, which means it undergoes more rigorous testing for durability, temperature range, and reliability than standard commercial 2N2221 devices. This ensures superior performance under extreme environmental conditions and higher quality assurance standards.
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Can this transistor handle high-frequency applications?
Yes, with a transition frequency (fT) of around 250 MHz, this transistor is capable of operating effectively in moderate high-frequency circuits, making it suitable for RF amplification and signal processing tasks within its power and voltage ratings.
What is the maximum operating temperature for reliable use?
This transistor supports an operating temperature range from -55??C to +200??C, allowing it to function reliably in environments with significant temperature fluctuations, which is critical for aerospace and industrial applications.
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How does the current gain (hFE) range impact circuit design?
The wide DC current gain range of 40 to 300 provides flexibility in circuit design, allowing the transistor to be used in various amplification and switching configurations. Designers can select operating points to optimize linearity or switching speed as needed.
Is this transistor suitable for power switching applications?
With a collector current capacity of up to 800mA and power dissipation of 625mW, it is suitable for moderate power switching applications, particularly where reliability and thermal stability are priorities. However, for very high power needs, additional heat sinking or alternative devices may be required.
