JANTXVU2N2221AL-Transistor Overview
The JANTXVU2N2221AL is a robust bipolar junction transistor (BJT) designed for high-reliability and military-grade applications. It features an NPN silicon epitaxial planar transistor structure optimized for switching and amplification tasks in demanding environments. This transistor supports collector currents up to 800 mA and offers a collector-emitter voltage rating of 40 V, making it suitable for moderate power applications. Its complementary high gain and stable performance under high temperatures provide engineers and sourcing specialists with a dependable component for rugged industrial and aerospace designs. For quality assurance and sourcing, refer to IC Manufacturer.
JANTXVU2N2221AL-Transistor Key Features
- High current capability: Supports collector currents up to 800 mA, enabling robust switching and amplification in power-efficient circuits.
- Voltage tolerance: Collector-emitter voltage rating of 40 V ensures reliable operation in circuits requiring moderate voltage handling.
- Military-grade reliability: The JAN (Joint Army-Navy) standard ensures compliance with stringent environmental and electrical testing, enhancing system longevity.
- Stable gain characteristics: Offers a high current gain (hFE) typically between 40 and 300, which improves circuit sensitivity and accuracy in control applications.
JANTXVU2N2221AL-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Bipolar Junction | ?C |
| Collector-Emitter Voltage (Vceo) | 40 | V |
| Collector Current (Ic) | 800 | mA |
| Power Dissipation (Ptot) | 625 | mW |
| Transition Frequency (fT) | 250 | MHz |
| DC Current Gain (hFE) | 40 to 300 | ?C |
| Package Type | TO-18 Metal Can | ?C |
| Operating Temperature Range | -55 to +200 | ??C |
JANTXVU2N2221AL-Transistor Advantages vs Typical Alternatives
This transistor stands out with its military-grade JAN certification, ensuring superior reliability and environmental resistance compared to commercial-grade transistors. Its high gain and current capacity allow for precise control and robust power handling, making it a preferred choice for aerospace and industrial electronics requiring long-term stable performance. The metal can package also provides excellent thermal dissipation and mechanical durability, advantageous for harsh operating conditions.
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Typical Applications
- Switching and amplification circuits in aerospace and defense systems, where reliability and thermal stability are critical.
- Industrial control systems requiring stable transistor operation under wide temperature ranges.
- Low noise preamplifier stages benefiting from the high gain and frequency response.
- General purpose medium power switching in rugged environments with temperature extremes.
JANTXVU2N2221AL-Transistor Brand Info
The JANTXVU2N2221AL transistor is manufactured under the JAN (Joint Army-Navy) standard, which certifies components for military and aerospace use with rigorous screening and testing protocols. This product embodies a commitment to quality and reliability, ensuring consistent performance across demanding applications. The TO-18 metal can package and silicon epitaxial planar technology reflect the brand??s focus on durability and electrical stability, catering to engineers requiring trustworthy semiconductor components.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current for this transistor is 800 mA, making it suitable for moderate power applications such as switching and amplification where this current level is required.
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What voltage ratings does the device support?
This NPN transistor supports a collector-emitter voltage (Vceo) of up to 40 volts, allowing it to operate reliably within circuits that handle voltages up to this threshold without breakdown.
How does the JAN certification affect component reliability?
JAN certification ensures the transistor has passed rigorous military-grade testing for environmental stresses, electrical performance, and long-term reliability, making it ideal for critical aerospace and defense applications.
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What is the typical gain range for this transistor?
The DC current gain (hFE) of this transistor typically ranges between 40 and 300, providing flexibility for amplification needs in various analog and switching circuits.
In which package is this transistor supplied, and what are its benefits?
This device comes in a TO-18 metal can package, which offers enhanced thermal conductivity and mechanical robustness, beneficial for applications exposed to temperature extremes and physical stress.
