JANTXVR2N2907AUB/TR NPN Transistor by JAN – TO-3 Package, High Power Switching

  • This transistor provides reliable switching and amplification for efficient circuit performance.
  • A robust voltage rating ensures stable operation under varying electrical conditions.
  • The compact package reduces board space, enabling denser and more flexible designs.
  • Ideal for power regulation applications, it maintains consistent output in demanding environments.
  • Manufactured to meet strict quality standards for durable and long-lasting device operation.
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产品上方询盘

JANTXVR2N2907AUB/TR Overview

The JANTXVR2N2907AUB/TR is a high-reliability PNP bipolar junction transistor designed for use in rugged and demanding industrial environments. With its robust construction and military-grade specifications, this transistor offers dependable performance in switching and amplification applications. Engineered for enhanced durability, it supports high voltage and current ratings, making it suitable for power management circuits and control systems. The device complies with stringent quality standards for long-term stability and repeatability. Sourcing specialists and engineers will find this transistor ideal for applications requiring consistent operation under thermal and mechanical stress. Available through IC Manufacturer, it supports seamless integration into complex electronic assemblies.

JANTXVR2N2907AUB/TR Key Features

  • High Voltage Handling Capability: Supports collector-emitter voltages up to 60 V, enabling robust operation in power switching circuits.
  • Elevated Collector Current: Rated for up to 800 mA continuous collector current, ensuring reliable handling of moderate power loads.
  • Military-Grade Quality: Manufactured to JAN (Joint Army-Navy) standards for enhanced reliability in harsh environments.
  • Low Power Dissipation: Efficient thermal management with a maximum power dissipation of 800 mW maintains device integrity during extended use.

JANTXVR2N2907AUB/TR Technical Specifications

ParameterSpecification
Transistor TypePNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)60 V
Collector-Base Voltage (VCBO)60 V
Emitter-Base Voltage (VEBO)5 V
Collector Current (IC)800 mA
Power Dissipation (Ptot)800 mW
DC Current Gain (hFE)100 – 300 (varies by test conditions)
Transition Frequency (fT)100 MHz (typical)
Package TypeTO-18 Metal Can

JANTXVR2N2907AUB/TR Advantages vs Typical Alternatives

This transistor offers superior reliability and robustness compared to standard commercial-grade devices, thanks to its military specification compliance. Its high voltage and current ratings combined with a metal can package provide enhanced thermal performance and mechanical stability. Such characteristics translate to greater accuracy and longevity in industrial applications where environmental stress and electrical load variations are common.

Typical Applications

  • Industrial power control circuits requiring high-voltage PNP switching with reliable operation under elevated temperatures.
  • Amplification stages in analog signal processing where consistent current gain is critical.
  • Military and aerospace systems demanding components with stringent quality and durability standards.
  • General-purpose transistor applications in rugged environments such as automotive electronics and instrumentation.

JANTXVR2N2907AUB/TR Brand Info

The JANTXVR2N2907AUB/TR is part of a legacy line of transistors manufactured under rigorous standards suitable for military and aerospace applications. The JANTX prefix indicates compliance with Joint Army-Navy quality requirements, ensuring superior reliability and performance in critical systems. This product line is recognized for precision manufacturing, consistent quality testing, and robust packaging options, making it a trusted choice for engineers designing mission-critical electronic equipment.

FAQ

What environments is the JANTXVR2N2907AUB/TR transistor best suited for?

This transistor is optimized for harsh environments requiring high reliability, such as military, aerospace, and industrial settings. Its metal can package and JAN-certified construction help withstand mechanical shock, vibration, and temperature extremes.

What are the key electrical limits to consider when integrating this transistor?

Key electrical limits include a maximum collector-emitter voltage of 60 V, maximum collector current of 800 mA, and power dissipation of 800 mW. Staying within these ratings ensures long-term device reliability and stable performance.

How does the packaging affect the transistor??s performance?

The TO-18 metal can package provides excellent thermal conductivity and mechanical protection. This helps dissipate heat effectively and protects the transistor from environmental stresses, contributing to its durability and consistent operation.

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产品中间询盘

Can this transistor be used in switching and amplification applications?

Yes, the transistor??s specifications support both switching and linear amplification roles. Its high gain and voltage ratings make it versatile for various analog and power control circuits.

What testing or quality standards does this transistor comply with?

The device meets Joint Army-Navy (JAN) military standards, which include rigorous screening and testing for electrical and mechanical reliability, ensuring suitability for critical and high-reliability applications.

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