JANTXVP2N2222AUB/TR Overview
The JANTXVP2N2222AUB/TR is a high-performance bipolar junction transistor (BJT) designed for switching and amplification in industrial and military-grade applications. Engineered for reliability under harsh conditions, this transistor features a robust TO-18 hermetic metal can package ensuring excellent thermal stability and long-term durability. Offering a maximum collector current of 600mA and a collector-emitter voltage rating of 40V, it meets stringent standards for rugged electronics. Ideal for signal amplification and switching circuits, this device delivers consistent performance with low noise and stable gain characteristics. For trusted sourcing and authentic semiconductor components, visit IC Manufacturer.
JANTXVP2N2222AUB/TR Key Features
- High Collector Current Capacity: Supports up to 600mA, enabling efficient switching and amplification in demanding circuits.
- Robust Voltage Ratings: Collector-Emitter voltage up to 40V ensures operation in moderately high-voltage environments without performance degradation.
- Hermetic TO-18 Metal Can Package: Provides superior protection against moisture and contaminants, enhancing reliability in industrial and military applications.
- Stable Gain (hFE): Consistent current gain between 40 and 300 aids in precision amplification and predictable switching behavior.
- Fast Switching Speed: Suitable for high-frequency applications, ensuring efficient signal processing and reduced power losses.
- Low Noise Characteristics: Ideal for audio frequency amplification and sensitive signal conditioning circuits.
- Wide Operating Temperature Range: Designed to maintain performance across -55??C to +200??C, supporting extreme environmental conditions.
JANTXVP2N2222AUB/TR Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (Vceo) | 40 V |
| Collector-Base Voltage (Vcbo) | 75 V |
| Emitter-Base Voltage (Vebo) | 6 V |
| Collector Current (Ic) | 600 mA |
| Power Dissipation (Pc) | 800 mW |
| DC Current Gain (hFE) | 40 to 300 |
| Transition Frequency (fT) | 300 MHz (typical) |
| Operating Temperature Range | -55??C to +200??C |
| Package Type | TO-18 Hermetic Metal Can |
JANTXVP2N2222AUB/TR Advantages vs Typical Alternatives
This transistor offers enhanced thermal and mechanical robustness compared to standard plastic-packaged BJTs, making it ideal for industrial and military electronics. Its hermetic packaging ensures superior environmental resistance, while the wide gain range and fast switching speed provide greater design flexibility and improved circuit efficiency. These advantages translate into higher reliability and longer service life under demanding operating conditions.
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Typical Applications
- Signal amplification in audio and RF circuits requiring low noise and stable gain performance, particularly in harsh environments.
- Switching applications in control systems and industrial automation where reliable operation at elevated temperatures is critical.
- Military and aerospace electronic systems demanding rugged transistor components with extended temperature range and hermetic sealing.
- General-purpose transistor replacement in legacy designs requiring TO-18 package compatibility and proven electrical characteristics.
JANTXVP2N2222AUB/TR Brand Info
The JANTXVP2N2222AUB/TR is part of a well-established line of transistors manufactured under strict quality controls for dependable performance in critical applications. Known for meeting military standards, this component exemplifies the brand??s commitment to delivering industrial-grade semiconductor devices with proven reliability. Its design and packaging reflect decades of experience in serving sectors where durability and consistent electrical behavior are non-negotiable.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current is rated at 600mA, which allows the device to handle moderate power switching and amplification tasks effectively without exceeding thermal limits.
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How does the TO-18 hermetic package benefit the transistor??s performance?
The TO-18 hermetic metal can package protects the transistor from moisture, dust, and mechanical stress, enhancing long-term reliability and stable operation under harsh environmental conditions.
What is the typical current gain (hFE) range for this device?
This transistor exhibits a DC current gain ranging from 40 to 300, providing flexibility in circuit design for both small signal amplification and switching purposes.
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Can this transistor operate at high temperatures?
Yes, it supports a wide operating temperature range from -55??C up to +200??C, making it suitable for industrial and military applications requiring thermal resilience.
Is this transistor suitable for high-frequency applications?
With a typical transition frequency of 300 MHz, the transistor is well-suited for many high-frequency switching and amplification tasks, including RF signal processing.
