JANTXVK2N3700UB-Transistor High Voltage NPN Transistor in TO-3 Package by JAN

  • This transistor amplifies or switches electronic signals, enabling efficient control in circuits.
  • It supports voltage levels suitable for robust performance in demanding environments.
  • The compact package design allows for board-space savings in dense electronic assemblies.
  • Ideal for use in power regulation or signal amplification, enhancing device responsiveness.
  • Manufactured to meet stringent quality standards, ensuring consistent and reliable operation.
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产品上方询盘

JANTXVK2N3700UB-Transistor Overview

The JANTXVK2N3700UB is a high-performance bipolar junction transistor (BJT) designed for reliable switching and amplification in demanding industrial and military-grade applications. This transistor provides robust voltage and current handling capabilities, ensuring stable operation under harsh environmental conditions. Featuring a silicon NPN structure, it supports medium power levels and offers consistent gain characteristics with low noise. Its construction meets stringent quality standards, making it suitable for precision circuits requiring dependable performance. Sourcing specialists and engineers will find this transistor ideal for high-reliability systems in aerospace, defense, and industrial electronics. For detailed technical data and sourcing, visit IC Manufacturer.

JANTXVK2N3700UB-Transistor Key Features

  • High Voltage Handling: Supports collector-emitter voltage up to 60V, enabling use in moderate voltage switching and amplification without risk of breakdown.
  • Robust Collector Current: Maximum collector current of 200mA ensures it can drive moderate loads efficiently in various circuits.
  • High Gain (hFE): Current gain ranging from 40 to 300 enhances signal amplification precision, critical for analog signal processing and control systems.
  • Military-Grade Reliability: Constructed to meet strict JAN (Joint Army-Navy) standards, providing enhanced durability and stability in extreme environments.

JANTXVK2N3700UB-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN Silicon ?C
Collector-Emitter Voltage (Vceo) 60 Volts
Collector-Base Voltage (Vcbo) 75 Volts
Emitter-Base Voltage (Vebo) 5 Volts
Collector Current (Ic) 200 mA
Power Dissipation (Pc) 625 mW
DC Current Gain (hFE) 40 to 300 ?C
Transition Frequency (fT) 40 MHz
Operating Temperature Range -65 to +200 ??C

JANTXVK2N3700UB-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings combined with a wide gain range, providing enhanced flexibility and reliability compared to typical small-signal transistors. Its military-grade certification ensures consistent performance under temperature extremes and mechanical stress, which standard commercial transistors may not withstand. This makes it an excellent choice for precision, high-reliability industrial and defense applications where long-term stability is critical.

Typical Applications

  • Signal amplification in aerospace and defense electronic systems, where stable gain and ruggedness are essential for mission-critical operations.
  • Switching circuits requiring moderate power handling with consistent performance in temperature-variable environments.
  • Analog control systems in industrial automation that demand reliable transistor operation over extended periods.
  • Test and measurement equipment circuits, benefiting from the low noise and stable gain characteristics of this transistor.

JANTXVK2N3700UB-Transistor Brand Info

The JANTXVK2N3700UB is part of a family of transistors manufactured under strict military standards, emphasizing quality, reliability, and performance. It is produced by a trusted supplier known for delivering components that meet rigorous Joint Army-Navy (JAN) requirements. This product is specifically designed to serve engineers and sourcing specialists who require devices with proven endurance and consistent electrical characteristics for critical industrial and defense applications.

FAQ

What is the maximum collector current of this transistor?

The transistor supports a maximum collector current of 200mA, making it suitable for moderate power switching and amplification tasks without compromising reliability.

Can this transistor operate in extreme temperature conditions?

Yes, it is rated for an operating temperature range from -65??C up to +200??C, which ensures reliable performance in harsh and variable environmental conditions.

What type of transistor technology does it use?

This device is a silicon-based NPN bipolar junction transistor, offering stable electrical characteristics and compatibility with standard transistor circuits.

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产品中间询盘

Is this transistor suitable for military applications?

Indeed, it complies with JAN military specifications, ensuring enhanced durability and reliability required for aerospace, defense, and other mission-critical applications.

What is the typical gain range (hFE) for this transistor?

The DC current gain typically ranges from 40 to 300, allowing for flexible design options in amplification and switching circuits where specific gain levels are needed.

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