JANTXVK2N2919L-Transistor by JAN – High-Power Switching Transistor, TO-3 Package

  • This transistor amplifies or switches electronic signals, enabling efficient circuit control and signal processing.
  • The device supports a voltage rating that ensures stable operation under typical electrical stress conditions.
  • Its compact package design allows for board-space savings in densely packed electronic assemblies.
  • Ideal for use in power regulation circuits where precise switching enhances overall system efficiency.
  • Manufactured to meet standard reliability criteria, providing consistent performance over the device lifespan.
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JANTXVK2N2919L-Transistor Overview

The JANTXVK2N2919L is a high-performance NPN bipolar junction transistor designed for robust switching and amplification applications. Built to meet military and industrial standards, this transistor offers reliable operation under demanding conditions with a high voltage rating and substantial current capacity. Its durable construction ensures consistent performance in power regulation, audio amplification, and signal processing circuits. Ideal for engineers and sourcing specialists requiring a dependable transistor, the device delivers efficient gain and stable operation. For detailed procurement and technical support, visit IC Manufacturer.

JANTXVK2N2919L-Transistor Key Features

  • High Voltage Handling: Supports collector-emitter voltages up to 80V, enabling use in high-voltage circuits and power applications.
  • Substantial Collector Current: Handles collector currents up to 800mA, allowing effective switching and amplification in medium power circuits.
  • Reliable Gain Performance: Offers a DC current gain (hFE) range of 40 to 300, providing flexibility in amplification across various circuit designs.
  • Military-Grade Construction: Designed to meet JAN (Joint Army-Navy) quality standards ensuring enhanced reliability and extended operating life in harsh environments.

JANTXVK2N2919L-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 800 mA
DC Current Gain (hFE) 40 to 300 ??
Transition Frequency (fT) 100 MHz
Power Dissipation (Ptot) 625 mW
Operating Temperature Range -65 to +200 ??C

JANTXVK2N2919L-Transistor Advantages vs Typical Alternatives

This transistor stands out for its combination of high voltage tolerance and robust current handling compared to typical silicon BJTs. Its military-grade certification ensures superior reliability and long-term stability under extreme temperature and environmental stress, making it preferable for mission-critical and industrial applications. Additionally, its wide gain range provides versatility, enabling precise control in amplification circuits where accuracy and performance consistency are essential.

Typical Applications

  • Power Amplification: Used in audio and RF amplifiers requiring stable gain and efficient power handling in rugged operational environments.
  • Switching Circuits: Effective in medium power switching tasks within industrial control systems and communication equipment.
  • Signal Processing: Suitable for signal amplification in instrumentation and sensor interfaces demanding low noise and consistent performance.
  • Military and Aerospace Electronics: Designed for use in defense systems where reliability and durability under harsh conditions are mandatory.

JANTXVK2N2919L-Transistor Brand Info

The JANTXVK2N2919L transistor is produced under strict quality standards aligned with JAN (Joint Army-Navy) military specifications. This designation guarantees a high level of quality, reliability, and performance consistency, distinguishing it in the semiconductor market for mission-critical and industrial applications. The product is sourced from reputable manufacturers specializing in high-reliability discrete components, making it a trusted choice for engineers demanding stringent compliance and durability.

FAQ

What type of transistor is the JANTXVK2N2919L?

The JANTXVK2N2919L is an NPN bipolar junction transistor (BJT) designed for both switching and amplification purposes in medium power electronic circuits.

What voltage and current ratings does this transistor support?

This device supports a maximum collector-emitter voltage of 80V and a collector current up to 800mA, suitable for a variety of industrial and military-grade applications.

How does the DC current gain range affect circuit design?

The wide DC current gain range from 40 to 300 allows designers to select appropriate biasing and operating points, ensuring flexible amplification performance across different configurations.

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Is the JANTXVK2N2919L suitable for high-temperature environments?

Yes, it is rated for operation from -65??C up to +200??C, making it appropriate for harsh and high-temperature conditions commonly found in aerospace and military applications.

What are the benefits of the JAN military certification?

JAN certification ensures the transistor meets stringent reliability, quality, and performance standards required for defense and aerospace uses, offering enhanced durability and consistent functionality in critical systems.

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