JANTXVK2N2907AUA-Transistor Overview
The JANTXVK2N2907AUA is a high-performance PNP bipolar junction transistor designed for demanding switching and amplification applications. It supports a maximum collector current of 600mA and a collector-emitter voltage rating of 60V, making it suitable for medium-power industrial circuits. The device offers robust gain characteristics and reliable operation under varying thermal conditions. With a maximum power dissipation of 800mW and a complementary NPN counterpart, this transistor ensures versatility and dependable performance. Ideal for engineers and sourcing specialists, this transistor is a solid choice for precision switching and amplification needs in industrial electronics. For more details, visit IC Manufacturer.
JANTXVK2N2907AUA-Transistor Key Features
- High collector current capacity: Supports up to 600mA, enabling efficient handling of medium-power loads in amplification circuits.
- Robust voltage ratings: Collector-emitter voltage up to 60V ensures reliable operation in circuits requiring moderate voltage tolerance.
- Optimized gain characteristics: A DC current gain (hFE) range of 40 to 300 facilitates precise signal amplification and switching control.
- Thermal stability: With a maximum junction temperature of 200??C, it maintains performance under elevated operating conditions, enhancing overall reliability.
JANTXVK2N2907AUA-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP Bipolar Junction Transistor | |
| Collector-Emitter Voltage (Vceo) | 60 | V |
| Collector-Base Voltage (Vcbo) | 60 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Collector Current (Ic) | 600 | mA |
| DC Current Gain (hFE) | 40 to 300 | |
| Power Dissipation (Ptot) | 800 | mW |
| Transition Frequency (fT) | 100 | MHz |
| Junction Temperature (Tj) | 200 | ??C |
| Package | TO-18 Metal Can |
JANTXVK2N2907AUA-Transistor Advantages vs Typical Alternatives
This transistor stands out due to its robust voltage and current ratings combined with a wide gain range, offering engineers improved sensitivity and control in switching and amplification tasks. Its metal-can TO-18 package ensures enhanced thermal dissipation compared to plastic packages. The device??s reliability at elevated temperatures and standard power dissipation make it a preferred option over typical low-power or surface-mount alternatives in industrial environments requiring consistent performance.
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Typical Applications
- Signal amplification in analog circuits requiring stable gain and moderate power handling, such as audio amplifiers and sensor interfaces.
- Switching applications in relay drivers and low-to-medium power control circuits where reliable current handling is essential.
- General-purpose transistor use in industrial and commercial electronic equipment for reliable performance.
- Complementary transistor pairs in push-pull amplifier configurations for improved efficiency and linearity.
JANTXVK2N2907AUA-Transistor Brand Info
The JANTXVK2N2907AUA transistor is manufactured under stringent quality standards to ensure high reliability and performance consistency. Packaged in a TO-18 metal can for superior thermal management, this device is designed to meet the rigorous demands of industrial and commercial electronics. It is part of a well-established product family known for precision and durability, supporting engineers seeking dependable bipolar junction transistors for medium-power applications.
FAQ
What is the maximum operating voltage for this transistor?
The maximum collector-emitter voltage for this transistor is 60 volts, allowing it to operate safely in circuits with moderate voltage requirements without risk of breakdown.
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Can this transistor handle high current loads?
Yes, it can handle a continuous collector current of up to 600mA, which suits a range of medium-power switching and amplification applications.
What package type does this transistor come in, and why is it important?
This transistor is housed in a TO-18 metal can package, which offers superior thermal dissipation and mechanical robustness compared to plastic packages, enhancing reliability in industrial environments.
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Is this transistor suitable for high-frequency applications?
With a transition frequency (fT) of approximately 100 MHz, this device is capable of supporting moderate high-frequency operation commonly required in switching and amplification circuits.
What is the typical gain range of this transistor?
The DC current gain (hFE) ranges from 40 to 300, providing flexibility in circuit design for varying amplification and switching requirements.
