JANTXVK2N2222A-Transistor NPN Amplifier Bipolar Junction Transistor TO-18 Package

  • This transistor amplifies and switches electronic signals, enabling efficient circuit control and operation.
  • It features a high current gain, which enhances signal strength without requiring additional components.
  • The compact TO-18 metal can package provides a durable, space-saving solution suitable for tight layouts.
  • Ideal for use in low-power amplification circuits, it supports clear signal processing in communication devices.
  • Manufactured to meet strict quality standards, ensuring consistent performance under various operating conditions.
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JANTXVK2N2222A-Transistor Overview

The JANTXVK2N2222A is a high-performance bipolar junction transistor (BJT) designed for robust switching and amplification applications in industrial and aerospace environments. With a collector current rating up to 800mA and a collector-emitter voltage of 40V, this device offers reliable operation under demanding conditions. Its complementary gain bandwidth and low saturation voltage enable efficient signal processing and power control, making it ideal for moderate power amplification and switching tasks. Manufactured to meet stringent military specifications, the transistor ensures superior durability and consistent performance. For sourcing and detailed technical support, visit IC Manufacturer.

JANTXVK2N2222A-Transistor Key Features

  • High collector current capability: Supports up to 800mA, enabling efficient handling of moderate power loads in switching and amplification circuits.
  • Collector-emitter voltage rating of 40V: Allows operation in a wide range of voltage environments, increasing versatility in industrial designs.
  • Low saturation voltage: Minimizes power loss during conduction, improving overall circuit efficiency and reducing heat generation.
  • Military-grade reliability: Produced under stringent standards to ensure stable performance in harsh or mission-critical applications.

JANTXVK2N2222A-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 40 V
Collector Current (IC) 800 mA
Gain Bandwidth Product (fT) 300 MHz
DC Current Gain (hFE) 100?C300 ?C
Power Dissipation (PD) 625 mW
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Transition Frequency (fT) 300 MHz
Operating Temperature Range -55 to +125 ??C

JANTXVK2N2222A-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced reliability and higher current handling compared to standard low-power transistors. Its military-grade certification ensures superior tolerance to temperature extremes and mechanical stress, which typical commercial devices may not withstand. The low saturation voltage reduces power dissipation, contributing to efficient circuit operation and longevity. These characteristics make it a preferred choice for engineers requiring dependable, high-performance bipolar transistors in challenging industrial environments.

Typical Applications

  • Switching circuits requiring frequent on/off cycling with moderate power loads, benefiting from its fast switching speed and durability in industrial control systems.
  • Signal amplification in audio and communication equipment, where gain stability and linearity are critical for performance.
  • Driver stages for relays, solenoids, and LED indicators, utilizing the transistor??s ability to handle collector currents up to 800mA reliably.
  • Embedded system applications demanding robust transistor operation under varying temperature and voltage conditions.

JANTXVK2N2222A-Transistor Brand Info

The JANTXVK2N2222A transistor is produced under the JANTX series, known for its stringent compliance with military and aerospace standards. This product line is recognized for exceptional durability, electrical performance, and consistency across production batches. Designed to meet or exceed MIL-STD requirements, it supports engineers and sourcing specialists in deploying reliable semiconductor components where failure is not an option. The brand??s focus on quality and traceability ensures confidence in mission-critical applications.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for this transistor is 800mA, allowing it to handle moderate power loads efficiently in switching and amplification circuits.

Can this transistor operate at high frequencies?

Yes, with a gain bandwidth product of approximately 300MHz, the device is suitable for moderately high-frequency applications including signal amplification and switching.

What voltage levels can this transistor withstand?

This transistor can tolerate a collector-emitter voltage of up to 40V, a collector-base voltage of 75V, and an emitter-base voltage of 6V, supporting a wide range of industrial voltage environments.

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Is this transistor suitable for harsh environmental conditions?

Absolutely. Manufactured to military specifications, it is built to operate reliably across a temperature range of -55??C to +125??C, ensuring performance in demanding industrial and aerospace settings.

How does the low saturation voltage benefit circuit design?

A low saturation voltage reduces power loss when the transistor is conducting, which improves efficiency, lowers heat generation, and extends the longevity of both the device and the overall system.

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