JANTXVE2N3057A-Transistor by JANTXVE ?C High-Power Switching Transistor, TO-3 Package

  • This transistor amplifies electrical signals efficiently, enabling precise control in electronic circuits.
  • High voltage tolerance ensures stable operation under demanding electrical conditions.
  • The compact CBZ package reduces board space, facilitating integration into dense circuit designs.
  • Ideal for switching applications, it enhances performance in power management systems.
  • Manufactured to meet rigorous quality standards, ensuring consistent reliability in various environments.
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产品上方询盘

JANTXVE2N3057A-Transistor Overview

The JANTXVE2N3057A is a high-power NPN bipolar junction transistor designed for robust switching and amplification tasks in industrial electronics. Featuring a collector current capacity of up to 10A and a collector-emitter voltage rating of 60V, this transistor supports demanding applications requiring reliable high-current handling. Its complementary gain characteristics and durable TO-3 metal package enable superior thermal management and long-term stability under varying load conditions. This device is ideal for power regulation, motor control, and audio amplification circuits, offering engineers a dependable solution with consistent performance. For detailed procurement and technical support, visit IC Manufacturer.

JANTXVE2N3057A-Transistor Key Features

  • High Collector Current Capacity: Supports up to 10A, enabling effective handling of heavy current loads in power switching applications.
  • Robust Voltage Ratings: With a collector-emitter voltage of 60V, it ensures reliable operation within industrial voltage ranges.
  • TO-3 Metal Package: Provides excellent thermal dissipation, enhancing device longevity and stability in high-power environments.
  • High DC Current Gain (hFE): Offers gain values typically ranging from 20 to 70, improving amplification efficiency and signal fidelity.

JANTXVE2N3057A-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vce) 60 V
Collector Current (Ic) 10 A
DC Current Gain (hFE) 20 ?C 70
Power Dissipation (Pd) 115 W
Transition Frequency (fT) 2.5 MHz (typical)
Package Type TO-3 Metal Can
Operating Junction Temperature (Tj) 200 ??C (max)

JANTXVE2N3057A-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high current capacity and voltage tolerance compared to many standard alternatives, making it ideal for industrial power regulation and amplification tasks. Its TO-3 metal package ensures better heat dissipation and reliability under continuous heavy loads, reducing thermal stress and improving operational lifetime. The broad current gain range also allows flexible design integration, delivering both efficiency and robustness in demanding environments.

Typical Applications

  • Power Amplifiers: Used in audio and signal amplification circuits requiring high current handling and thermal stability for consistent output performance.
  • Motor Control: Suitable for switching and driving DC motors in industrial automation, ensuring dependable operation under varying load conditions.
  • Voltage Regulation: Employed in power supply circuits for voltage stabilization and switching, enhancing system reliability.
  • Switching Circuits: Ideal for high-current switching applications in industrial controls and power management systems.

JANTXVE2N3057A-Transistor Brand Info

The JANTXVE2N3057A is part of the trusted JANTX series, known for military-grade quality and enhanced reliability. Manufactured under rigorous standards, this transistor meets stringent performance and durability criteria, making it a preferred choice for aerospace, defense, and industrial electronics projects requiring certified component integrity and extended operational life.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a maximum continuous collector current of 10 amperes, enabling it to handle high-current applications such as power amplification and motor control without performance degradation.

How does the TO-3 package benefit device performance?

The TO-3 metal can package offers excellent heat dissipation properties, which helps maintain lower junction temperatures during high power operation, enhancing reliability and extending the transistor’s service life.

Can this transistor be used in switching circuits?

Yes, with its high current and voltage ratings coupled with robust gain characteristics, this device is well-suited for switching applications in industrial power control and automation circuits.

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产品中间询盘

What is the typical DC current gain (hFE) range of this transistor?

The device typically exhibits a DC current gain between 20 and 70, allowing it to amplify moderate input signals efficiently while maintaining stability across operating conditions.

What is the maximum operating junction temperature for this component?

The maximum junction temperature rating is 200??C, indicating that the device can operate safely under high thermal stress when properly heat-sinked or cooled in industrial environments.

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