JANTXVE2N2920U-Transistor by JAN – High-Power NPN Transistor, TO-3 Package

JANTXVE2N2920U-Transistor Overview

The JANTXVE2N2920U-Transistor is a high-voltage silicon NPN bipolar junction transistor designed for power amplification and switching applications. It offers a collector-emitter voltage rating suitable for demanding industrial environments, ensuring robust performance under high-voltage conditions. This transistor features a complementary low-level gain and a maximum collector current that supports medium power loads, making it ideal for reliable operation in audio amplifiers, power drivers, and other control circuits. Its hermetically sealed metal TO-3 package enhances thermal dissipation and long-term durability. For detailed sourcing and technical support, visit IC Manufacturer.

JANTXVE2N2920U-Transistor Key Features

• High collector-emitter voltage (V_CEO up to 250V): Enables operation in circuits requiring significant voltage handling, enhancing design flexibility.
• Collector current (I_C) rating of 15A: Supports moderate power loads, suitable for power amplification and switching roles.
• Low DC current gain (h_FE): Provides controlled amplification, beneficial for linear and switching applications requiring predictable gain characteristics.
• Hermetically sealed TO-3 metal package: Offers excellent thermal conductivity and mechanical protection, improving reliability in harsh operating conditions.

JANTXVE2N2920U-Transistor Technical Specifications

JANTXVE2N2920U-Transistor Advantages vs Typical Alternatives

This transistor’s high voltage and current ratings, combined with a durable metal TO-3 package, provide superior power handling and thermal management compared to typical plastic-encapsulated transistors. Its stable gain characteristics and rugged design increase reliability in industrial and power amplifier circuits, making it an advantageous choice for engineers requiring robust performance in demanding electrical environments.

Typical Applications

• Power Amplifier Circuits: Ideal for audio and signal amplification where high voltage and current capability are necessary, ensuring quality and reliability.
• Power Switching Devices: Suitable for switching medium power loads in industrial control systems.
• Motor Control Circuits: Can be used in motor driver stages requiring high voltage and current handling.
• Voltage Regulators and Stabilizers: Effective in circuits demanding stable transistor operation under varying load conditions.

JANTXVE2N2920U-Transistor Brand Info

The JANTXVE2N2920U-Transistor is a high-reliability device produced under stringent quality standards to meet military and industrial specifications. Packaged in a hermetically sealed metal TO-3 case, it is engineered for long-term durability and stable electrical characteristics. This product is part of a series designed for demanding applications requiring robust power handling and dependable operation in harsh environments.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this transistor is 15 amperes, allowing it to handle medium power loads effectively in power amplification and switching applications.

What package type does this transistor use, and why is it important?

This device features a hermetically sealed TO-3 metal package, which provides excellent thermal dissipation and mechanical protection, enhancing reliability and longevity in industrial environments.

What voltage ratings are specified for this transistor?

The collector-emitter voltage rating is 250 volts, while the collector-base voltage is rated at 300 volts. These high voltage ratings support usage in circuits with significant voltage demands.

How does the DC current gain affect the transistor’s performance?

The DC current gain (hFE) ranges from 20 to 70, offering predictable amplification suitable for both linear and switching operations, allowing engineers to design circuits with controlled gain characteristics.

Is this transistor suitable for high-frequency applications?

With a transition frequency (fT) of approximately 3 MHz, this transistor can be used in moderate frequency applications, such as audio or low-to-mid frequency switching circuits.