JANTXVE2N2919L-Transistor by JAN | High Power NPN Transistor | TO-3 Package

  • This transistor controls current flow, enabling efficient signal amplification and switching in circuits.
  • High voltage rating supports stable operation under demanding electrical conditions, enhancing durability.
  • Compact package design reduces board space, facilitating integration in dense electronic assemblies.
  • Ideal for use in power regulation systems, ensuring consistent performance in variable load environments.
  • Manufactured with quality standards that ensure long-term reliability and consistent device performance.
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JANTXVE2N2919L-Transistor Overview

The JANTXVE2N2919L transistor is a rugged, high-performance silicon NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It features a robust JEDEC registered outline, ensuring consistent reliability and ease of integration into industrial and military-grade circuits. The transistor supports a collector current of up to 800 mA and a collector-emitter voltage rating of 40 V, making it suitable for moderate power applications. Its complementary PNP counterpart allows for versatile circuit design. Manufactured to meet stringent quality standards, this transistor is an ideal choice for engineers and sourcing specialists seeking dependable, high-quality components. For more information, visit IC Manufacturer.

JANTXVE2N2919L-Transistor Key Features

  • High collector current capacity: Supports up to 800 mA, enabling effective handling of moderate power loads in amplification and switching circuits.
  • Durable voltage ratings: Collector-emitter voltage of 40 V ensures robust operation under typical industrial conditions.
  • Standardized JEDEC TO-18 package: Facilitates straightforward PCB integration and reliable thermal performance.
  • Stable gain characteristics: Provides predictable amplification, ensuring signal integrity in linear and switching applications.

JANTXVE2N2919L-Transistor Technical Specifications

Parameter Value Units
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (VCE) 40 V
Collector Current (IC) 800 mA
Power Dissipation (Ptot) 800 mW
DC Current Gain (hFE) 40 to 140
Transition Frequency (fT) 250 MHz
Junction Temperature (TJ) +200 ??C
Package Type TO-18 Metal Can

JANTXVE2N2919L-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced reliability and stable gain over typical alternatives, making it a superior choice for precision amplification and switching tasks. Its robust voltage and current ratings enable effective handling of moderate power levels with improved thermal tolerance. The standardized packaging promotes easy integration in industrial and military designs, providing sourcing specialists and engineers with a trusted component that balances performance with durability.

Typical Applications

  • General-purpose amplification in industrial signal processing, where stable gain and moderate power handling are required for reliable performance.
  • Switching elements in control circuits, benefiting from its fast transition frequency and robust collector current capability.
  • Complementary transistor pairs in push-pull amplifier stages for audio or signal conditioning systems.
  • Interface and driver stages in instrumentation and measurement equipment, leveraging its proven reliability and precision.

JANTXVE2N2919L-Transistor Brand Info

The JANTXVE2N2919L transistor is produced under stringent military and industrial standards, representing the high reliability and ruggedness required in demanding applications. This product is part of a legacy series trusted by engineers worldwide for its consistent quality and performance. Its JEDEC registered package and well-documented specifications ensure it meets the expectations of both design engineers and sourcing professionals seeking proven semiconductor solutions for critical electronic systems.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a maximum collector current of 800 mA, allowing it to handle moderate power loads typical in signal amplification and switching applications.

What type of package does the transistor come in?

This device is housed in a TO-18 metal can package, a standardized JEDEC outline that ensures mechanical durability and effective heat dissipation for reliable operation.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency (fT) of approximately 250 MHz, this transistor is suitable for many moderate high-frequency applications, including RF amplification and switching circuits.

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产品中间询盘

What temperature range can the transistor operate within?

The junction temperature rating of up to +200??C allows this transistor to function effectively in harsh industrial environments and military-grade applications requiring high thermal resilience.

Is this transistor compatible with complementary PNP devices?

Yes, it is commonly paired with complementary PNP transistors in push-pull amplifier configurations and other complementary circuit designs for balanced performance.

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