JANTXVE2N2919-Transistor Overview
The JANTXVE2N2919 is a high-performance bipolar junction transistor (BJT) designed for medium-power amplification and switching applications. Featuring a silicon NPN configuration, this transistor provides reliable operation with a collector current rating suitable for industrial and military-grade environments. Its robust design ensures stable gain and efficient thermal dissipation, making it a preferred choice for precision analog circuits and power drivers. Sourced from a trusted supplier, it meets rigorous quality standards essential for demanding electronic systems. For further details and sourcing, visit IC Manufacturer.
JANTXVE2N2919-Transistor Key Features
- High collector current capacity: Supports continuous collector currents up to 800mA, enabling effective handling of moderate power loads.
- Wide voltage rating: With a maximum collector-emitter voltage of 40V, it offers flexibility across various voltage domains.
- Stable current gain (hFE): Ensures consistent amplification performance across operating conditions, critical for analog signal integrity.
- Robust power dissipation: Rated for 625mW, enhancing reliability in thermally challenging environments.
JANTXVE2N2919-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Silicon BJT |
| Collector-Emitter Voltage (Vceo) | 40 V |
| Collector-Base Voltage (Vcbo) | 60 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 800 mA |
| Power Dissipation (Pc) | 625 mW |
| Current Gain (hFE) | 40 to 300 (varies with operating conditions) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | TO-18 Metal Can |
JANTXVE2N2919-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of current handling and voltage tolerance, outperforming many generic equivalents in reliability and gain stability. Its military-grade construction ensures enhanced durability and thermal performance, making it suitable for critical industrial and defense applications. Compared to typical plastic-encapsulated transistors, the metal can package improves heat dissipation and longevity under stress.
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Typical Applications
- Signal amplification in analog circuits requiring stable gain and medium power output; commonly used in audio amplifiers and driver stages.
- Switching applications in industrial control systems where moderate voltage and current handling are essential.
- General-purpose amplification for sensors and instrumentation requiring precision and reliability.
- Power driver stages in communication equipment and embedded systems with thermal management demands.
JANTXVE2N2919-Transistor Brand Info
The JANTXVE2N2919 is manufactured under stringent quality controls, adhering to military and industrial standards for performance and reliability. Recognized for its robust metal can packaging and consistent electrical characteristics, this transistor is widely trusted by engineers for use in harsh and mission-critical environments. Its legacy is backed by a history of proven performance in diverse electronic designs, supported by comprehensive datasheets and technical support.
FAQ
What type of transistor is the JANTXVE2N2919?
The device is a silicon NPN bipolar junction transistor (BJT), designed for medium-power amplification and switching applications. Its construction allows for efficient current control and voltage handling in various electronic circuits.
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What is the maximum collector current this transistor can handle?
The transistor supports a continuous collector current of up to 800 milliamps (mA), making it suitable for moderate power loads typical in industrial and military electronics.
What package does this transistor come in, and why does it matter?
It is housed in a TO-18 metal can package, which provides superior thermal dissipation and mechanical protection compared to plastic packages, enhancing reliability in demanding environments.
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What are the key voltage ratings for this transistor?
The maximum collector-emitter voltage (Vceo) is rated at 40 volts, collector-base voltage (Vcbo) at 60 volts, and emitter-base voltage (Vebo) at 5 volts, defining its operational limits in voltage-sensitive applications.
In what applications is this transistor commonly used?
This transistor is frequently employed in analog signal amplification, switching circuits, power driver stages, and instrumentation where stable gain and robust operation under thermal stress are necessary.
