JANTXVE2N2907AL-Transistor PNP Bipolar Junction Transistor – TO-39 Package by JAN

JANTXVE2N2907AL-Transistor Overview

The JANTXVE2N2907AL is a high-performance PNP bipolar junction transistor (BJT) designed for rugged and reliable operation in industrial and military-grade applications. Engineered to provide robust amplification and switching capabilities, this transistor features a complementary design optimized for low-noise and high-gain performance. Its construction supports high voltage and current handling, making it suitable for demanding circuits requiring durability and precision. Manufactured to stringent JANTX military standards, this transistor ensures consistent performance under harsh environmental conditions, making it an ideal choice for engineers and sourcing specialists focused on dependable semiconductor solutions. For further technical details and sourcing, visit IC Manufacturer.

JANTXVE2N2907AL-Transistor Key Features

• High Collector-Emitter Voltage: Supports up to 60V, enabling operation in high-voltage amplifier and switching circuits without breakdown risk.
• Sustained Collector Current Capability: Handles continuous currents up to 1.5A, ensuring reliability in power amplification and load driving applications.
• Complementary PNP Configuration: Provides excellent compatibility with NPN counterparts for push-pull amplifier stages, improving circuit efficiency.
• Military-Grade Construction: Built to JANTX specifications, offering enhanced ruggedness and stability in extreme temperature and vibration environments.

JANTXVE2N2907AL-Transistor Technical Specifications

JANTXVE2N2907AL-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to standard low-power PNP transistors, enabling enhanced reliability and performance in demanding industrial environments. The military-grade build ensures consistent operation across wide temperature ranges and harsh conditions, which typical commercial-grade transistors may not sustain. Its optimized gain and frequency response provide improved circuit efficiency and signal integrity, making it a preferred choice for precision amplification and switching tasks.

Typical Applications

• Power amplification stages in industrial and military communication equipment, where high voltage and current handling are critical for signal fidelity and robustness.
• Switching devices in control circuits requiring reliable operation under fluctuating loads and temperatures.
• Complementary transistor pairs for push-pull amplifiers, improving linearity and efficiency in audio and RF circuits.
• General-purpose amplification in instrumentation and sensor interface circuits demanding stable gain and low noise.

JANTXVE2N2907AL-Transistor Brand Info

The JANTXVE2N2907AL transistor is manufactured under JANTX military standards, which ensure high reliability and ruggedness for mission-critical applications. This product is specifically designed to meet stringent quality and performance criteria required by defense and aerospace industries. The brand??s focus on durability and precise electrical characteristics makes this transistor a trustworthy component for engineers designing robust systems that must withstand extreme environmental conditions. Its legacy support and availability further enhance its value in long-term industrial projects.

FAQ

What is the maximum collector current rating for this PNP transistor?

The maximum continuous collector current is rated at 1.5 amperes, allowing it to handle moderate power loads effectively in various amplification and switching applications without exceeding thermal limits.

Can this transistor operate reliably at high temperatures?

Yes, it is designed to operate within a temperature range of -55??C to +200??C, making it suitable for harsh environments where thermal stability and reliability are crucial.

What package type does the JANTXVE2N2907AL come in?

This transistor is housed in a TO-18 metal can package, which offers excellent thermal conductivity and mechanical protection, ideal for rugged industrial and military use.

Is this transistor suitable for high-frequency applications?

With a transition frequency (f_T) of approximately 100 MHz, this device supports moderate high-frequency operation, suitable for RF amplification and switching tasks within that bandwidth.

How does this transistor compare to typical commercial PNP transistors?

Compared to standard commercial transistors, it offers enhanced voltage and current handling, military-grade construction for improved reliability, and stable performance across a wider temperature range, making it better suited for demanding industrial and defense applications.