JANTXVE2N2906AUA-Transistor | PNP Transistor Switching Amplifier | TO-39 Metal Case

  • This transistor controls current flow efficiently, enabling precise signal amplification in electronic circuits.
  • Its voltage rating supports stable operation under varying electrical loads, ensuring consistent performance.
  • The compact package reduces board space, allowing for denser circuit designs and easier integration.
  • Ideal for switching applications, it helps manage power delivery in compact consumer electronics effectively.
  • Manufactured to meet strict quality standards, it offers reliable operation over extended use periods.
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JANTXVE2N2906AUA-Transistor Overview

The JANTXVE2N2906AUA is a high-reliability PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Manufactured to meet stringent military standards, it ensures stable performance under harsh environmental conditions, making it ideal for aerospace, defense, and industrial electronics. The device features robust current handling and voltage ratings, providing dependable operation in demanding circuits. With its proven durability and consistent electrical characteristics, this transistor supports engineers and sourcing specialists requiring quality and long-term reliability from a trusted IC Manufacturer.

JANTXVE2N2906AUA-Transistor Key Features

  • High voltage rating: Supports up to 40V collector-emitter voltage, enabling use in medium-power switching circuits without risk of breakdown.
  • Reliable current capacity: Handles collector currents up to 600mA, suitable for moderate load driving applications.
  • Military-grade construction: Complies with JAN (Joint Army-Navy) standards ensuring ruggedness and enhanced thermal stability in critical environments.
  • Low noise and high gain: Offers a typical DC current gain (hFE) range of 40 to 100, contributing to efficient signal amplification.

JANTXVE2N2906AUA-Transistor Technical Specifications

Parameter Value Units
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
DC Current Gain (hFE) 40 to 100
Transition Frequency (fT) 100 MHz
Power Dissipation (Ptot) 625 mW
Operating Temperature Range -65 to +200 ??C

JANTXVE2N2906AUA-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and consistent electrical performance compared to typical commercial-grade devices. Its military-standard certification ensures enhanced resistance to temperature extremes and mechanical stress. The combination of a robust voltage rating and stable gain makes it preferable for precision switching and amplification tasks, especially in environments demanding long-term operational integrity and minimal failure rates.

Typical Applications

  • Signal amplification in analog circuits requiring stable gain and low noise, such as audio preamplifiers and sensor interfaces.
  • Switching devices in industrial control systems where dependable current handling is critical.
  • Military and aerospace electronics, benefiting from the device??s ruggedness and compliance with stringent defense standards.
  • General purpose transistor replacement in legacy systems demanding high reliability and performance consistency.

JANTXVE2N2906AUA-Transistor Brand Info

The JANTXVE2N2906AUA is produced under the Joint Army-Navy (JAN) designation, reflecting its manufacture to meet military specifications. This ensures rigorous quality control, durability, and electrical consistency. The product is part of a family of transistors widely recognized for their performance in mission-critical applications. Sourced from a reputable IC Manufacturer, it supports engineers and procurement teams requiring components with verified traceability and reliability certification.

FAQ

What type of transistor is the JANTXVE2N2906AUA?

The JANTXVE2N2906AUA is a PNP bipolar junction transistor (BJT) designed primarily for amplification and switching applications. It operates with a collector current up to 600mA and is suitable for medium-power circuits.

What voltage ratings does this transistor support?

This transistor features a collector-emitter voltage rating of 40V, collector-base voltage of 60V, and emitter-base voltage of 5V, enabling reliable operation under typical industrial and military voltage conditions.

What makes this transistor suitable for military applications?

Its manufacture to JAN standards ensures high reliability, thermal stability, and mechanical robustness, making it suitable for aerospace and defense electronics where performance under harsh environments is critical.

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Can this transistor be used for switching applications?

Yes, with a maximum collector current of 600mA and a power dissipation rating of 625mW, it efficiently switches moderate loads in control systems and other electronic circuits.

What is the typical gain range of this component?

The DC current gain (hFE) typically ranges from 40 to 100, providing sufficient amplification for many analog and signal processing applications while maintaining low noise characteristics.

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