JANTXVE2N2484UB-Transistor Overview
The JANTXVE2N2484UB is a high-voltage NPN bipolar junction transistor designed for robust switching and amplification applications in demanding industrial environments. This transistor offers a collector-to-emitter voltage rating suitable for medium to high power circuits, making it ideal for use in power supplies, motor controls, and amplifier stages. With its reliable performance under elevated temperature and voltage conditions, the device supports engineers and sourcing specialists looking for a durable, military-grade transistor solution. For more detailed component data and sourcing options, visit IC Manufacturer.
JANTXVE2N2484UB-Transistor Key Features
- High Collector-Emitter Voltage (Vceo): Supports up to 100 V, enabling operation in circuits requiring robust voltage tolerance and enhanced safety margins.
- Collector Current Capacity: Handles a continuous collector current of up to 7 A, providing sufficient drive capability for power switching applications.
- Low Saturation Voltage: Ensures efficient switching with minimal power loss, improving overall circuit efficiency and thermal management.
- High Gain (hFE): Offers current gain typically between 40 to 320, allowing for effective signal amplification and reducing the drive current required from preceding stages.
JANTXVE2N2484UB-Transistor Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 100 | V |
| Collector-Base Voltage (Vcbo) | 140 | V |
| Emitter-Base Voltage (Vebo) | 7 | V |
| Collector Current – Continuous (Ic) | 7 | A |
| Power Dissipation (Pc) | 115 | W |
| Transition Frequency (fT) | 3 | MHz |
| DC Current Gain (hFE) | 40 to 320 | ?? |
| Operating Junction Temperature (Tj) | 200 | ??C |
JANTXVE2N2484UB-Transistor Advantages vs Typical Alternatives
This transistor stands out due to its high voltage and current ratings, which provide greater reliability and operational headroom compared to typical low-power devices. Its low saturation voltage and high gain ensure efficient switching and amplification, reducing overall power consumption and heat generation. The device??s robust thermal limits support long-term durability in harsh industrial settings, making it a preferred choice over common transistors with lower performance margins.
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Typical Applications
- Power Amplification: Ideal for use in medium-power amplifier circuits requiring high voltage and current handling capabilities to drive loads effectively.
- Motor Control: Suitable for switching and controlling DC motors in industrial automation due to its high collector current and voltage ratings.
- Power Supply Regulation: Enables stable switching in regulated power supply circuits, enhancing efficiency and thermal stability.
- General Switching: Provides reliable operation for high-voltage switching in various industrial electronic systems.
JANTXVE2N2484UB-Transistor Brand Info
The JANTXVE2N2484UB is part of a series of military-specification transistors designed to meet stringent reliability and performance standards. This product is manufactured under rigorous quality controls to ensure consistent electrical characteristics and durability in critical applications. Its design reflects a balance of high voltage tolerance, current capacity, and gain, making it a trusted component among engineers requiring dependable semiconductor solutions for industrial and defense electronics.
FAQ
What is the maximum collector-emitter voltage for this transistor?
The transistor supports a maximum collector-emitter voltage of 100 volts, allowing it to operate safely in medium to high voltage circuits without risk of breakdown under normal conditions.
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Can this transistor handle continuous high current loads?
Yes, it can handle a continuous collector current up to 7 amperes, which is suitable for many power switching and amplification tasks in industrial electronics.
What is the typical gain range for this device?
The DC current gain (hFE) typically ranges from 40 to 320, depending on operating conditions, enabling efficient signal amplification and reducing the need for high base drive currents.
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Is this transistor suitable for high-temperature environments?
Yes, with a maximum operating junction temperature of 200??C, it is designed to maintain reliable performance in elevated temperature conditions common in industrial applications.
How does the low saturation voltage benefit circuit design?
A low saturation voltage reduces power loss during switching, which improves overall efficiency and helps manage thermal dissipation, leading to longer device life and better system reliability.
