JANTXVE2N2222AL-Transistor Overview
The JANTXVE2N2222AL transistor is a military-grade, high-reliability NPN bipolar junction transistor designed for switching and amplification in demanding electronic circuits. Rated for continuous collector current up to 600mA and a collector-emitter voltage of 40V, it is well-suited for robust industrial and defense applications requiring stable performance under harsh conditions. This transistor provides a gain bandwidth product of 300MHz, enabling efficient signal amplification at moderate frequencies. Its hermetically sealed TO-18 metal can package ensures enhanced thermal management and environmental protection, making it a reliable choice for precision analog and digital circuits. Available through IC Manufacturer, it meets stringent military standards for quality and durability.
JANTXVE2N2222AL-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Bipolar Junction | – |
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 75 | V |
| Emitter-Base Voltage (VEBO) | 6 | V |
| Collector Current (IC) | 600 | mA |
| Power Dissipation (Ptot) | 625 | mW |
| Transition Frequency (fT) | 300 | MHz |
| DC Current Gain (hFE) | 100 – 300 | – |
| Package Type | TO-18 Metal Can | – |
JANTXVE2N2222AL-Transistor Key Features
- High collector current capability: Supports up to 600mA, enabling reliable switching and amplification in moderate power applications.
- Wide voltage ratings: Collector-emitter voltage of 40V and collector-base voltage of 75V allow for flexible design in various circuit topologies.
- High frequency response: Transition frequency of 300MHz ensures effective operation in RF and high-speed switching circuits.
- Hermetically sealed TO-18 package: Provides excellent thermal dissipation and environmental protection for enhanced reliability in industrial environments.
- Military-grade quality: Designed to meet stringent standards for performance and durability under extreme conditions.
- Consistent DC current gain: hFE range of 100 to 300 maintains stable amplification characteristics across operating conditions.
- Low noise characteristics: Suited for sensitive analog signal amplification and low-distortion applications.
Typical Applications
- Signal amplification in military and aerospace communication systems requiring high reliability and stable gain performance over temperature.
- Switching elements in industrial control circuits where ruggedness and long-term durability are critical.
- Low noise preamplifier stages in sensor interfacing and instrumentation electronics demanding precise signal conditioning.
- General-purpose analog and digital circuit design in harsh environments, leveraging its robust packaging and electrical characteristics.
JANTXVE2N2222AL-Transistor Advantages vs Typical Alternatives
This transistor stands out for its military-grade construction, offering superior reliability and environmental resistance compared to commercial-grade equivalents. Its combination of moderate collector current capacity and high voltage tolerance provides design flexibility without compromising robustness. The hermetically sealed TO-18 package enhances thermal management and protects against moisture and contaminants, ensuring consistent performance in challenging industrial applications. These factors make it a dependable choice for engineers prioritizing durability, accuracy, and stable gain in precision electronics.
