JANTXVE2N2222A-Transistor Overview
The JANTXVE2N2222A is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features robust electrical characteristics including a collector current rating suitable for medium power tasks and a voltage rating that supports a wide range of industrial and commercial circuits. The device offers reliable operation under various temperature conditions, making it ideal for use in demanding environments where durability and consistent performance are critical. Engineers and sourcing specialists will appreciate its compatibility with standard transistor applications, ensuring seamless integration into existing designs. More product details are available from the IC Manufacturer.
JANTXVE2N2222A-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector-Base Voltage (VCBO) | 75 V |
| Emitter-Base Voltage (VEBO) | 6 V |
| Collector Current (IC) | 800 mA |
| Power Dissipation (PD) | 500 mW |
| DC Current Gain (hFE) | 100 minimum at IC=150 mA |
| Transition Frequency (fT) | 300 MHz (typical) |
| Operating Junction Temperature | -55??C to +200??C (military grade) |
JANTXVE2N2222A-Transistor Key Features
- High collector current rating: Supports up to 800 mA, enabling efficient switching and amplification in medium-power applications.
- Wide voltage tolerance: With a collector-emitter voltage rating of 40 V, it handles a broad range of industrial circuit voltages safely and reliably.
- Military-grade temperature range: Operates from -55??C to +200??C, ensuring dependable performance in harsh or extreme environments.
- Strong gain characteristics: Provides a minimum DC current gain of 100 at typical operating currents, facilitating improved signal amplification.
Typical Applications
- Switching circuits in industrial control systems where reliable, medium-power transistor operation is required for actuating relays or driving loads.
- Low-noise preamplifier stages in audio and sensor circuits, benefiting from the transistor??s gain and frequency response.
- Signal amplification in communication equipment, leveraging its high transition frequency for enhanced signal clarity.
- General-purpose amplification and switching in automotive electronics, given its robust thermal and electrical characteristics.
JANTXVE2N2222A-Transistor Advantages vs Typical Alternatives
This transistor offers a significant advantage over standard small-signal BJTs due to its enhanced voltage and current ratings combined with a wide operating temperature range. This makes it more reliable in industrial and military applications where environmental conditions can be severe. Its higher gain and frequency response enable more efficient amplification, reducing the need for additional gain stages and improving circuit efficiency. These features collectively optimize performance and durability compared to typical alternatives.
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JANTXVE2N2222A-Transistor Brand Info
The JANTXVE2N2222A is a military-grade variant of the popular 2N2222 transistor, traditionally manufactured by established semiconductor producers adhering to stringent quality and reliability standards. This device is typically sourced from manufacturers specializing in defense and industrial-grade components, ensuring compliance with MIL-STD specifications for temperature, electrical performance, and mechanical robustness. The brand reputation focuses on delivering trustworthy semiconductors suitable for critical applications, with traceability and consistent quality that engineers depend on.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current for the JANTXVE2N2222A transistor is 800
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